475 Sentences With "random access memory" | Random Sentence Generator

Modern Macs also store some settings in an area of the system called the nonvolatile random access memory (NVRAM); older Macs use parameter random-access memory (PRAM) in a similar manner.

Random Access Memory (RAM) is one part of a computer's speed equation.

NVE has also licensed its spintronic magnetoresistive random access memory technology, commonly known as MRAM.

Micron's two main products are within the scope of dynamic random-access memory (DRAM) and flash memory.

DRAM, or dynamic random access memory, has proven especially difficult for Chinese companies to produce at scale.

When computer scientists talk about memory, they refer to RAM (random access memory) and hard drive storage.

Another computer component that can be upgraded easily is memory, commonly called RAM, for random access memory.

RAM stands for random access memory, and it's where a computer stores memory that it is actively using.

Such an advance would require an entirely new kind of memory, called qRAM, or quantum random access memory.

Proposals already suggest using these oscillators as a form of quantum random access memory—actually storing quantum states.

With it, you get 100GB of cloud storage and two gigs of RAM, which stands for random access memory.

This means the arrangement can act as a data store, known as a resistive random-access memory, or ReRAM.

About a year ago the company combined with Spansion, which increased its exposure to static random access memory chips.

Thankfully, this TED-Ed video breaks down the surprisingly human-like properties of computer RAM, or random access memory.

Daft Punk's Random Access Memory sounded warmer to my ears, with with clearer mids and highs compared to on AirPods.

Recent favorable pricing has helped drive success for the Boise, Idaho-based company's dynamic random access memory and NAND chips.

Micron is known for dynamic random access memory (DRAMs), which are the most basic commodity used as memory in many PCs.

The universe of Sacred Games was too big to hold easily in the short-term random access memory of his brain.

It's a side effect in D-RAM, which is dynamic random access memory, that causes memory cells to leak their charges.

Strong iPhone demand would benefit memory players like Micron Technology as well, which supplies phones with types of random access memory (RAM).

Prices of dynamic random access memory (DRAM) chips used in personal computers have been recovering as the PC market improves amid tighter supplies.

Favorable pricing continues to help the Boise, Idaho-based company, which saw higher average selling prices for its dynamic random access memory chips.

Commodity chips — particularly Micron's key products, flash and dynamic random-access memory chips — are building blocks of various technological devices including PCs and smartphones.

Bloomberg reports:Jinhua is a state-owned enterprise funded by the Chinese government and established to design and manufacture dynamic random-access memory chips, or DRAM.

The vulnerability, identified by researchers in the VUSec Lab at Vrije Universiteit Amsterdam, targets a phone's dynamic random access memory using an attack called Rowhammer.

Micron deals in two types of chips, flash and dynamic random-access memory, or DRAM, chips, which end up in various electronic devices including computers.

Samsung does expect the market for so-called DRAM, or dynamic random-access memory, to gradually pick up as inventory clears and new customers emerge.

The indictment alleges that China was interested in gaining access to dynamic random-access memory, or DRAM, a type of technology it did not possess.

The firm's focus was to become a manufacturing leader in DRAM, or dynamic random access memory, a chip commonly used in personal computers, workstations and servers.

DRAMeXchange, a division of TrendForce, estimated that at least 5.5 percent of the global dynamic random access memory (DRAM) chip production capacity for July was affected.

Samsung, SK Hynix and Micron now account for nearly all the so-called dynamic random access memory, or DRAM, chips used in PCs, servers and smartphones.

Adding random-access memory (RAM) should give the computer the ability to run more programs at once, browse the web faster and play games more smoothly.

Shares of Micron, an Idaho-based chipmaker specializing in DRAM — dynamic random-access memory — and flash memory chips, ran up nearly 9 percent on the news.

The Chinese official said that Jinhua had not yet started production and was far from threatening DRAM (dynamic random access memory) circuit manufacturers in the United States.

In its latest earnings release, South Korea's SK Hynix said it anticipates DRAM (dynamic random-access memory) shipment growth of roughly 15 percent in the second quarter.

Among its new stars is Fujian Jinhua Integrated Circuit, a maker of dynamic random access memory (DRAM) chips, the commodity semiconductors snapped into smartphones, laptops and servers.

Micron said on Tuesday that average selling prices of dynamic random access memory (DRAM) chips, used in PCs and servers, jumped 21.83 percent in the fourth quarter.

Micron, which makes dynamic random access memory (DRAM) chips used in personal computers, is benefiting from an improving PC market at a time when supplies remain tight.

The authors of that paper reported on the successes of prototype DNA computers that used the genetic molecules for both long-term storage and random access memory (RAM).

Also lifting Micron shares were spot prices of dynamic random access memory (DRAM), which were heading higher, C.J. Muse, an analyst at Evercore ISI, told CNBC by email.

Revenue from dynamic random access memory (DRAM) chips used in computers and servers surged 76 percent in the reported quarter, accounting for 7.7.20 percent of its net sales.

Western Digital's business is largely driven by flash memory chip sales, whereas the majority of Micron's business comes from dynamic random-access memory chips, an entirely different market.

It also comes as China investigates Micron and its South Korean rivals over price fixing allegations, amid a surge in prices of dynamic random access memory (DRAM) chips.

The price of dynamic random-access memory (DRAM) chips, Micron's leading product, has long "defied gravity" thanks to rising demand for personal computers, tablets and other devices, Cramer said.

Revenue from dynamic random access memory (DRAM) chips used in computers and servers surged 56 percent in the third quarter, accounting for over 71 percent of its net sales.

Makers of a key category called dynamic random-access memory, or DRAM, have suffered product shortages and gluts that whipsawed pricing and heralded changing fortunes for the broader industry.

Over four days in 2001, they proved that Google's index could be stored using fast random-access memory instead of relatively slow hard drives; the discovery reshaped the company's economics.

Most investors are looking for a turnaround in demand for dynamic random-access memory chip (DRAM) at a time when chipmakers are cutting back on their capital expenditure, said Yoo.

If you are not sure which app is causing the slowness — or if the whole iPhone seems to be crawling — you can try clearing out the device's random access memory.

So-called fileless malware avoids detection by hiding its payload in secluded spots, like a computer's random-access memory or kernel, meaning it doesn't depend on hard drive files to run.

Dynamic random access memory (DRAM) content in smartphones is expected to increase 246 percent this year to an average of 16.98 GB per device, according to a latest research by DRAMeXchange.

This wasn't random access memory; rather than being able to retrieve any stored data whenever you wanted, you could only retrieve the data in the order it was sent into the line.

RAM is short for "random access memory," and it's the short-term storage your phone uses to pull data for apps and other aspects of your phone's software while they're in use.

Still, investors were concerned because they saw Micron as beholden to a boom-bust cycle in dynamic random-access memory and flash chips, its flagship products, which are widely viewed as commodities.

We forecast "upside to CY17E Street EPS driven by memory price increases in February and March (led by strength in server DRAM [dynamic random-access memory] and despite slower trends in handset units)."

Micron is an Idaho-based chipmaker that, according to Attorney General Jeff Sessions, is worth over $100 billion and owns 20–25 percent of the dynamic random-access memory (DRAM) industry as well.

The world's biggest producer of NAND and DRAM chips expects bit growth of less than 20 percent for dynamic random access memory (DRAM) and a 30 percent rise for NAND flash, Bloomberg said.

For the vast majority of people, random-access memory is just a number on a spec sheet, and optimizing it is a simple matter of making it as big as one's budget would allow.

The loader Wardle examined is especially appealing, because it is designed to run whatever "payload," or malware, it receives directly in a computer's random access memory, rather than installing it on the hard drive.

RAM, or random access memory, stores the data short-term on silicon chips, assigning each piece of data a unique address that can be accessed randomly—in any order—to refer to the data later.

A recurring theme with Micron, one of the cheapest stocks in the S&P 500, is the market's concern around the supply-demand patterns of its top products, dynamic random-access memory and flash chips.

When it comes to the actual function of working as random access memory, the Trident Z RGB appears to be similar to the company's existing Trident Z line, although pricing and exact specs have yet to be announced.

But the company, which makes dynamic random access memory (DRAM) and NAND memory chips, reported a narrower-than-expected loss for its fiscal second quarter and said it sees improvement beginning in the second half of the calendar year.

SK Hynix Inc, Micron Technology Inc and Samsung - which dominate the global market for dynamic random access memory, or DRAM, chips used in personal computers, smartphones and servers - recently have issued upbeat assessments of the prospects for a recovery in chip prices.

The technology greatly increased computer memory capacity and remained the memory technology of choice until the early 1970s, when Intel Corporation began selling silicon-based solid-state dynamic random access memory, which could store more information in less space — and more quickly.

MIT researchers have developed a new 3D chip fabrication method that uses carbon nanotubes and resistive random-access memory (RRAM) cells together to create a combined nanoelectronic processor design that supports complex, 3D architecture – where traditional silicon-based chip fabrication works with 2D structures only.

The indictment unveiled Thursday alleges that the defendants conspired to pilfer trade secrets from Micron, particularly information about dynamic random-access memory (DRAM), a technology used to store data in electronic devices that is manufactured by Micron, and pass it to the Chinese government.

The indictment unveiled Thursday alleges that the defendants conspired to pilfer trade secrets from Micron, particularly information about dynamic random-access memory (DRAM), a memory technology used to store data in electronic devices that is manufactured by Micron, and pass it to the Chinese government.

The market was negatively affected not only by a sharp decrease in DRAM—which was affecting the industry as a whole at the time—but by a decline in SRAM (static random access memory) chips, which Nintendo used most notably for its save-state cartridges.

They highlighted several positive factors leading to higher demand for Samsung's memory chips, including an improvement in the personal computers (PC) business, aggressive restocking demand from Chinese smartphone makers, significant increase in iPhone memory content and the continued rise in server dynamic random access memory (DRAM) content.

In an indictment unsealed Thursday, the DOJ accused China's Fujian Jinhua Integrated Circuit, Taiwan's United Microelectronics Corporation, and employees including Jinhua's president, of economic espionage—of stealing proprietary technology from US-based Micron Technology to make dynamic random access memory chips, which are found in just about every gadget.

Fileless malware attacks use the existing legitimate tools on a machine so that no malware gets installed on the system, or they use malware that resides only in the infected machine's random-access-memory, rather than on the hard drive, so that the malware leaves no discernible footprint once it's gone.

So then in June 2007, when Justice released Cross following fairly intense hype—more intense, as I recall, than the hype for Daft Punk's Human After All two years earlier, nor small compared with 2013's blockbuster Random Access Memory—the thing bore down on me like an unavoidable enemy ship.

"While we believe it could be the mid- to later stages of the memory upturn and note memory fundamentals can change quickly, our industry discussions suggest 4QCY17 DRAM [dynamic random-access memory] pricing could rise (with NAND [flash memory] flat to up) and the DRAM cycle could remain tight in 2018," analyst Mark Delaney wrote in a note to clients.

It starts like a (Random Access?) memory of the glitzy disco that Daft Punk have come to fetishize over the course of their career, but as they bring their sunny vocoder trills from behind the clouds, the record ends in an electro-chorale—a reminder that technology's embrace need not necessarily be cold, and that, of course, the robots were human after all.

THUMP dug into the data, and it turns out that of the five states that had Random Access Memory in their favorite vinyl albums of 2016, four of them—Minnesota, Iowa, Nebraska, and Missouri—are among the top ten corn-producing states in the country according to the USDA's most report figures on crop production in the US. The other state that loved RAM the most is New Mexico, which has barely anything to do with corn.

Both phones also have an under-display fingerprint reader, wireless charging, use USB-C for power, and have stereo speakers (although YouTuber Marques Brownlee says the Galaxy S10 Plus actually has superior sound, in his opinion, compared to the Galaxy Note 10.)When it comes to random-access memory, or RAM, which helps computers multitask more quickly, the Galaxy Note 10 Plus has 12 GB of RAM while the Galaxy S10 Plus comes standard with only 8 GB of RAM.

XDR DRAM. XDR DRAM (extreme data rate dynamic random-access memory) is a high- performance dynamic random-access memory interface. It is based on and succeeds RDRAM. Competing technologies include DDR2 and GDDR4.

Double Data Rate 3 Synchronous Dynamic Random-Access Memory, officially abbreviated as DDR3 SDRAM, is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors. DDR3 is a DRAM interface specification.

Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or such forms of memory as magnetic tape, which cannot be randomly accessed but which retains data indefinitely without electric power. Read-only memory devices can be used to store system firmware in embedded systems such as an automotive ignition system control or home appliance. They are also used to hold the initial processor instructions required to bootstrap a computer system.

A static RAM chip from a Nintendo Entertainment System clone (2K × 8 bits) Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term static differentiates SRAM from DRAM (dynamic random-access memory) which must be periodically refreshed. SRAM is faster and more expensive than DRAM; it is typically used for CPU cache while DRAM is used for a computer's main memory.

Some SSDs use magnetoresistive random-access memory (MRAM) for storing data.Douglas Perry. "Buffalo Shows SSDs with MRAM Cache" . 2012.Rick Burgess.

Double Data Rate 4 Synchronous Dynamic Random-Access Memory, officially abbreviated as DDR4 SDRAM, is a type of synchronous dynamic random-access memory with a high bandwidth ("double data rate") interface. Released to the market in 2014, it is a variant of dynamic random-access memory (DRAM), of which some have been in use since the early 1970s, and a higher-speed successor to the DDR2 and DDR3 technologies. DDR4 is not compatible with any earlier type of random-access memory (RAM) due to different signaling voltage and physical interface, besides other factors. DDR4 SDRAM was released to the public market in Q2 2014, focusing on ECC memory, while the non-ECC DDR4 modules became available in Q3 2014, accompanying the launch of Haswell-E processors that require DDR4 memory.

The term "memory" when used with reference to computers most often refers to volatile random- access memory (RAM). The two main types of volatile RAM are static random- access memory (SRAM) and dynamic random-access memory (DRAM). Bipolar SRAM was invented by Robert Norman at Fairchild Semiconductor in 1963, followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data. Commercial use of SRAM began in 1965, when IBM introduced their SP95 SRAM chip for the System/360 Model 95.

"Japanese Chip Dumping Has Ended, U.S. Finds". The New York Times. Nov. 3, 1987. Synchronous dynamic random-access memory (SDRAM) was developed by Samsung.

A magnetic nanoring is a ring-shaped nanoscale magnet, first proposed in 2000 as a structure for realizing multi-layer, ferromagnetic random access memory.

The cache controller is on-die. The cache is built from standard static random access memory (SRAM). The data and tag buses are ECC- protected.

Diode memory uses diodes and resistors to implement random-access memory for information storage. The devices have been dubbed “one diode-one resistor” (1D-1R).

Mark is related to them. From 1990 to 2007, the company designed and manufactured flash solid-state drives, dynamic random-access memory (DRAM), and static random-access memory (SRAM).. In 1994, Simple Technology bought Cirrus Logic’s flash controller operation, to enter the flash memory business for consumer electronic devices. In 1998, Simple Technology bought SiliconTech Inc., obtaining that company's business flash memory customer base and operation.

Nokia C1 has Android 9 Pie (Go Edition) operating system with random-access memory (RAM) 1 GB and Quad Core 1.3 Gigahertz (GHz) processor as CPU.

Its technology addressed the problems of write selectivity and speed, low read signal, and thermal stability that other products in the Magnetic Random Access Memory (MRAM) industry suffered from.

The IXP1200 integrates a StrongARM SA-1100-derived core and six microengines, which were RISC microprocessors with an instruction set optimized for network packet workloads. The StrongARM core performed non-real-time functions while the microengines manipulated network packets. The processor also integrates static random access memory (SRAM) and synchronous dynamic random access memory (SDRAM) controllers, a PCI interface and an IX bus interface. The IXP1200 contains 6.5 million transistors and measures 126 mm2.

To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory (vs. non-volatile memory), since it loses its data quickly when power is removed.

Level D was a RAM upgrade. This could take the form of up to 4k of RAM on the motherboard, or Netronics S-100 Jaws memory board. The Jaws memory board used from eight to thirty two 4116 16k by 1 bit dynamic random access memory chips, which could be added in groups of eight. The Jaws memory board used an Intel 8202 dynamic random access memory controller chip to refresh the memory, and multiplex the address bits.

ECN Magazine. "SPMT Consortium Releases New Specification." October 2, 2009. SPMT is a memory specification for dynamic random access memory (DRAM) that is based on SerDes rather than a standard parallel interface.

Advanced-Random Access Memory (RAM) is a type of dynamic random-access memory (DRAM) based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada (UGR), in Spain, in collaboration with the Centre National de la Recherche Scientifique (CNRS), in France. It was conceived by Noel Rodriguez (UGR), Francisco Gamiz (UGR) and Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate silicon on insulator (SOI), double-gate, FinFETs and multiple-gate field-effect transistors (MuFETs).

For example, a computer may read information off a floppy disk and store it temporarily in random access memory before it is written to the hard drive to be processed at a future date.

Power and a simple clock signal had to be supplied, but little else: random-access memory (RAM), a RAM controller, bus support and even a real-time operating system (RTOS) were all built in.

His works find application for technology concerning magnetoresistive random-access memory (MRAM) or magnetic data storage on hard disk drive, such as Heat Assisted MagnetoRecording (HAMR technology) which is assisted by a laser beam.

DDR4 SDRAM dual in-line memory module (DIMM). It is a type of DRAM (dynamic random-access memory), which uses MOS memory cells consisting of MOSFETs and MOS capacitors. The advent of the MOSFET enabled the practical use of MOS transistors as memory cell storage elements, a function previously served by magnetic cores in computer memory. The first modern computer memory was introduced in 1965, when John Schmidt at Fairchild Semiconductor designed the first MOS semiconductor memory, a 64-bit MOS SRAM (static random-access memory).

Non-volatile memory is typically used for the task of secondary storage, or long-term persistent storage. The most widely used form of primary storage today is a volatile form of random access memory (RAM), meaning that when the computer is shut down, anything contained in RAM is lost. However, most forms of non-volatile memory have limitations that make them unsuitable for use as primary storage. Typically, non-volatile memory costs more, provides lower performance, or has a limited lifetime compared to volatile random access memory.

The introduction of the first semiconductor memory chips in the late 1960s, which initially created static random-access memory (SRAM), began to erode the market for core memory. The first successful dynamic random-access memory (DRAM), the Intel 1103, followed in 1970. Its availability in quantity at 1 cent per bit marked the beginning of the end for core memory. Improvements in semiconductor manufacturing led to rapid increases in storage capacity and decreases in price per kilobyte, while the costs and specs of core memory changed little.

The advent of the MOSFET enabled the practical use of MOS transistors as memory cell storage elements, a function previously served by magnetic cores in computer memory. The first modern computer memory was introduced in 1965, when John Schmidt at Fairchild Semiconductor designed the first MOS semiconductor memory, a 64-bit MOS SRAM (static random-access memory). SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data. MOS technology is the basis for DRAM (dynamic random-access memory).

The .NET Micro Framework (NETMF) is a .NET Framework platform for resource- constrained devices with at least 256 KB of flash and 64 KB of random-access memory (RAM). It includes a small version of the .

Every core of a multi-core processor has a dedicated L2 cache and is usually not shared between the cores. The L3 cache, and higher-level caches, are shared between the cores and are not split. An L4 cache is currently uncommon, and is generally on dynamic random-access memory (DRAM), rather than on static random-access memory (SRAM), on a separate die or chip. That was also the case historically with L1, while bigger chips have allowed integration of it and generally all cache levels, with the possible exception of the last level.

In 1993, Samsung introduced its KM48SL2000 synchronous DRAM, and by 2000, SDRAM had replaced virtually all other types of DRAM in modern computers, because of its greater performance. For more information see Synchronous dynamic random-access memory#SDRAM history. Double data rate synchronous dynamic random-access memory (DDR SDRAM) is introduced in 2000. Compared to its predecessor in PC-clones, single data rate (SDR) SDRAM, the DDR SDRAM interface makes higher transfer rates possible by more strict control of the timing of the electrical data and clock signals.

An attacker is then free to analyze the data dumped from memory to find sensitive data, such as the keys, using various forms of key finding attacks. Since cold boot attacks target random access memory, full disk encryption schemes, even with a trusted platform module installed are ineffective against this kind of attack. This is because the problem is fundamentally a hardware (insecure memory) and not a software issue. However, malicious access can be prevented by limiting physical access and using modern techniques to avoid storing sensitive data in random access memory.

The Kauppinen team argues that the conductivity of the crystalline carbon structure allow for this application. In fact, the small size of carbon nanotubes and carbon NanoBuds, in theory, allow for a very high density of energy storage. The most common memory technology that is associated with carbon NanoBuds is Nano random-access memory (NRAM), or Nano- RAM. This technology is a type of nonvolatile random access memory, but it is based on the position of carbon nanotubes, or in this case, carbon NanoBuds on a chip like substrate.

For two years, the band worked on a concept album, Random Access Memory; a piece of work which they discarded altogether when they felt they had not yet reached the level of musical maturity for such an ambitious project.

The initial model (catalog number 26-3001) shipped with 4 KB of Dynamic Random Access Memory (DRAM) and in ROM. Its price was . Within a few months, Radio Shack stores across the US and Canada began selling the new computer.

Instead, engineers use tools to perform most functional verification work. C.F. O'Donnell. "Engineering for systems using large scale integration". p. 870. In 1986 the first one-megabit random-access memory (RAM) chips were introduced, containing more than one million transistors.

Because of their physical design, the capacity of modern computer random access memory devices, such as DIMM modules, is always a multiple of a power of 1024. It is thus convenient to use prefixes denoting powers of 1024, known as binary prefixes, in describing them. For example, a memory capacity of is conveniently expressed as 1 GiB rather than as 1.074 GB. The former specification is, however, often quoted as "1 GB" when applied to random access memory. Software allocates memory in varying degrees of granularity as needed to fulfill data structure requirements and binary multiples are usually not required.

ECC 1.2 V RDIMMs DDR, DDR2, DDR3, DDR4 and DDR5 all have different pin counts and/or different notch positions. As of August, 2014, DDR4 SDRAM is a modern emerging type of dynamic random access memory (DRAM) with a high-bandwidth ("double data rate") interface, and has been in use since 2013. It is the higher-speed successor to DDR, DDR2 and DDR3. DDR4 SDRAM is neither forward nor backward compatible with any earlier type of random access memory (RAM) because of different signalling voltages, timings, as well as other differing factors between the technologies and their implementation.

Everspin Technologies is a public semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory (MRAM) products, including Toggle MRAM and Spin-Transfer Torque MRAM (STT-MRAM) product families. It also licenses its technology for use in embedded MRAM (eMRAM) applications, magnetic sensor applications as well as performs backend foundry services for eMRAM. MRAM has the performance characteristics close to static random-access memory (SRAM) while also having the persistence of non-volatile memory, meaning that it will not lose its charge or data if power is removed from the system.

Computational RAM or C-RAM is random-access memory with processing elements integrated on the same chip. This enables C-RAM to be used as a SIMD computer. It also can be used to more efficiently use memory bandwidth within a memory chip.

Crocus Technology, founded in 2006, is a venture-capital-backed semiconductor startup company developing magnetoresistive random-access memory (MRAM) technology. The company's products originated in a Grenoble-based Spintec laboratory and its technology is licensed for stand-alone and embedded chip applications.

PernixData is a software company based in San Jose, California. PernixData was co-founded in February 2012 by Poojan Kumar and Satyam Vaghani. Its main product is PernixData FVP, which is software for virtualizing server-side flash memory and random-access memory (RAM).

Kazunari Ishimaru from the Memory Division, Toshiba Corporation Semiconductor and Storage Products Company, Yokohama, Japan was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2014 for contributions to static random access memory and complementary metal-oxide semiconductor devices.

Grandis, Inc. was founded in 2002 by Paul Nguyen. It was backed by venture capital firms such as Sevin Rosen Funds and Matrix Partners to pioneer non- volatile thin-film memory solutions based on spintronics. It invented spin transfer torque - random access memory (STT-RAM).

In computer technology, dynamic random access memory (DRAM) "soft errors" were linked to alpha particles in 1978 in Intel's DRAM chips. The discovery led to strict control of radioactive elements in the packaging of semiconductor materials, and the problem is largely considered to be solved.

Typically, Android smartphones securely erase encryption keys from random access memory when the phone is locked. This reduces the risk of an attacker being able to retrieve the keys from memory, even if they succeeded in executing a cold boot attack against the phone.

RAM contains multiplexing and demultiplexing circuitry, to connect the data lines to the addressed storage for reading or writing the entry. Usually more than one bit of storage is accessed by the same address, and RAM devices often have multiple data lines and are said to be "8-bit" or "16-bit", etc. devices. In today's technology, random-access memory takes the form of integrated circuit (IC) chips with MOS (metal-oxide- semiconductor) memory cells. RAM is normally associated with volatile types of memory (such as dynamic random-access memory (DRAM) modules), where stored information is lost if power is removed, although non-volatile RAM has also been developed.

Other types of non-volatile memories exist that allow random access for read operations, but either do not allow write operations or have other kinds of limitations on them. These include most types of ROM and a type of flash memory called NOR-Flash. The two main types of volatile random-access semiconductor memory are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Commercial uses of semiconductor RAM date back to 1965, when IBM introduced the SP95 SRAM chip for their System/360 Model 95 computer, and Toshiba used DRAM memory cells for its Toscal BC-1411 electronic calculator, both based on bipolar transistors.

In modern computers, primary storage almost exclusively consists of dynamic volatile semiconductor random-access memory (RAM), particularly dynamic random-access memory (DRAM). Since the turn of the century, a type of non-volatile floating-gate semiconductor memory known as flash memory has steadily gained share as off-line storage for home computers. Non-volatile semiconductor memory is also used for secondary storage in various advanced electronic devices and specialized computers that are designed for them. As early as 2006, notebook and desktop computer manufacturers started using flash-based solid-state drives (SSDs) as default configuration options for the secondary storage either in addition to or instead of the more traditional HDD.

Every core of a multi-core processor has a dedicated L1 cache and is usually not shared between the cores. The L2 cache, and higher-level caches, may be shared between the cores. L4 cache is currently uncommon, and is generally on (a form of) dynamic random-access memory (DRAM), rather than on static random-access memory (SRAM), on a separate die or chip (exceptionally, the form, eDRAM is used for all levels of cache, down to L1). That was also the case historically with L1, while bigger chips have allowed integration of it and generally all cache levels, with the possible exception of the last level.

He is mostly known for his early work on reducing Brownian fluctuations in computer memory chips. This work, performed while at SRI International earned him and his employer several patents, one of which laid the groundwork for the operation of modern dynamic random-access memory chips.

The phone can have either 16GB or 32GB of internal storage as well as 2GB of Random-access memory. It can be expanded via Micro SD up to 512GB. The phone also includes a 3.5mm headphone jack. It has a non-removable 3000mAh Lithium- ion battery.

Crossbar is a company based in Santa Clara, California. Crossbar develops a class of non-volatile resistive random-access memory (RRAM) technology. The company in 2013 announced its goal was a terabyte of storage on a single integrated circuit, compatible with standard CMOS semiconductor manufacturing processes.

Their first product was the Intercolor 8001, an intelligent terminal based on the Intel 8080. Released some time in early 1976 (or late 1975), it consisted of a $1,395 kit based around a 19-inch RCA delta-gun CRT and came with 4 kB of Random access memory (RAM).

The resulting deck could then be run through a tabulating machine to produce an invoice. This technique was an early form of random access memory and was the initial inspiration for the invention of the hard disk at IBM's San Jose Laboratory, what eventually became the IBM 305 RAMAC.

Initially, Roberts decided to concentrate on production of the computers. Prompt delivery of optional boards did not occur until October 1975. The Intel 8080 did not have dedicated circuitry to support dynamic random-access memory (DRAM) because in 1975, this type of memory was still a new technology.

Since the primary storage is required to be very fast, it predominantly uses volatile memory. Dynamic random-access memory is a form of volatile memory that also requires the stored information to be periodically reread and rewritten, or refreshed, otherwise it would vanish. Static random-access memory is a form of volatile memory similar to DRAM with the exception that it never needs to be refreshed as long as power is applied; it loses its content when the power supply is lost. An uninterruptible power supply (UPS) can be used to give a computer a brief window of time to move information from primary volatile storage into non-volatile storage before the batteries are exhausted.

Glass platters had several advantages, such as greater shock resistance, compared to aluminium platter.Toshiba MK1122FC, Information Processing Society of Japan ;Random-access memory (RAM) The Toshiba Toscal BC-1411 electronic calculator, which debuted in 1965,Toscal BC-1411 calculator, Science Museum, LondonToshiba "Toscal" BC-1411 Desktop Calculator introduced an early form of dynamic random-access memory (DRAM) built from discrete components. By 1986, NEC and AMD were manufacturing 32 KB VRAM (Video RAM) chips, compared to Texas Instruments which were manufacturing 8 KB VRAM chips at the time.Advances in Computer Graphics II, page 172, Springer Science+Business Media ;Optical discs The compact disc (CD) format was developed by Sony and Philips in 1979, and commercially released in 1982.

Double Data Rate Synchronous Dynamic Random-Access Memory, officially abbreviated as DDR SDRAM, is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) class of memory integrated circuits used in computers. DDR SDRAM, also retroactively called DDR1 SDRAM, has been superseded by DDR2 SDRAM, DDR3 SDRAM, and DDR4 SDRAM, and soon will be superseded by DDR5 SDRAM. None of its successors are forward or backward compatible with DDR1 SDRAM, meaning DDR2, DDR3, DDR4 and DDR5 memory modules will not work in DDR1-equipped motherboards, and vice versa. Compared to single data rate (SDR) SDRAM, the DDR SDRAM interface makes higher transfer rates possible by more strict control of the timing of the electrical data and clock signals.

SDRAM memory module Synchronous dynamic random-access memory (SDRAM) is any dynamic random-access memory (DRAM) where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to early 1990s used an asynchronous interface, in which input control signals have a direct effect on internal functions only delayed by the trip across its semiconductor pathways. SDRAM has a synchronous interface, whereby changes on control inputs are recognised after a rising edge of its clock input. In SDRAM families standardized by JEDEC, the clock signal controls the stepping of an internal finite state machine that responds to incoming commands.

A memory bank is a logical unit of storage in electronics, which is hardware- dependent. In a computer, the memory bank may be determined by the memory controller along with physical organization of the hardware memory slots. In a typical synchronous dynamic random-access memory (SDRAM) or double data rate synchronous dynamic random-access memory (DDR SDRAM), a bank consists of multiple rows and columns of storage units, and is usually spread out across several chips. In a single read or write operation, only one bank is accessed, therefore the number of bits in a column or a row, per bank and per chip, equals the memory bus width in bits (single channel).

Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It is headquartered in Boise, Idaho. Its consumer products are marketed under the brands CrucialCrucial service center in India , Service Center Contact, November 3, 2019.

The 4001 is a ROM (read-only memory) with four lines of output; the 4002 is a RAM (random access memory) with four lines of input/output. The 4003 is a static shift register to be used for expanding the I/O lines; e.g., for keyboard scanning or controlling a printer.

Hibernation (or suspend to disk) in computing is powering down a computer while retaining its state. Upon hibernation, the computer saves the contents of its random access memory (RAM) to a hard disk or other non-volatile storage. Upon resumption, the computer is exactly as it was before entering hibernation.

Microchip Technology's 32-bit product portfolio run at up to 600 DMIPs with up to 2048 KB Flash and 512 KB RAM with 32 MB integrated DDR2 dynamic random-access memory (DRAM) or 128 MB externally addressable options. The 32-bit portfolio addresses advanced graphics and Internet of Things (IoT) applications.

The award, which was originally referred to as the Materials Chemistry Forum Lifetime Award, was set up in 2008. It was named after the materials scientist John Bannister Goodenough, who has made significant contributions to the development of the first random access memory and in the field of Li-ion rechargeable batteries.

Commercial MOS memory, based on MOS transistors, was developed in the late 1960s, and has since been the basis for all commercial semiconductor memory. The first commercial DRAM IC chip, the Intel 1103, was introduced in October 1970. Synchronous dynamic random- access memory (SDRAM) later debuted with the Samsung KM48SL2000 chip in 1992.

Grandis supplies thin film memory devices. The company is also a licensor of magnetoresistive random-access memory (MRAM) process and design technology to fabless semiconductor companies, wafer foundries, and integrated device manufacturers. Target applications include storage, telecommunications, mobile devices, and computer networking. Grandis pioneered and developed the first STT-RAM thin film structures.

Established in 1976, ETRI is a non- profit government-funded research institute. In the 1980s, ETRI developed TDX (Time Division Exchange) and 4M DRAM (Dynamic Random Access Memory). In the 1990s, ETRI commercialized Code-division multiple access. In the 2000s, ETRI developed Terrestrial DMB, WiBro, and 4G LTE Advanced, for mobile communications.

Radeon () is a brand of computer products, including graphics processing units, random-access memory, RAM disk software, and solid-state drives, produced by Radeon Technologies Group, a division of Advanced Micro Devices (AMD). The brand was launched in 2000 by ATI Technologies, which was acquired by AMD in 2006 for US$5.4 billion.

This led to the first commercial DRAM IC chip, the Intel 1103, in October 1970.The DRAM memory of Robert Dennard history-computer.com Synchronous dynamic random-access memory (SDRAM) later debuted with the Samsung KM48SL2000 chip in 1992. The term "memory" is also often used to refer to non-volatile memory, specifically flash memory.

The first commercial DRAM IC chip was the Intel 1103, which was manufactured on an 8µm MOS process with a capacity of 1Kibit, and was released in 1970. Synchronous dynamic random-access memory (SDRAM) was developed by Samsung Electronics. The first commercial SDRAM chip was the Samsung KM48SL2000, which had a capacity of 16Mibit.

Sparse distributed memory (SDM) is a mathematical model of human long-term memory introduced by Pentti Kanerva in 1988 while he was at NASA Ames Research Center. It is a generalized random-access memory (RAM) for long (e.g., 1,000 bit) binary words. These words serve as both addresses to and data for the memory.

Crocus Technology supplies semiconductor memory devices. The company is also a licensor of magnetoresistive random-access memory (MRAM) process and design technology to fabless semiconductor companies, wafer foundries, and integrated device manufacturers. Target applications include storage, telecommunications, mobile devices, and computer networking. Crocus introduced the application of Thermal Assisted Switching (TAS) to MRAM technology.

He published the first hashing paperDumey, A. I. (1956). Indexing for rapid random-access memory. Computers and Automation 5 (12), 6-9 in 1956. Later, as a consultant, he co-invented the postal sorter and wrote the code that is used on the front of all USPS envelopes and packages in order to facilitate delivery.

Nano-RAM is a proprietary computer memory technology from the company Nantero. It is a type of nonvolatile random access memory based on the position of carbon nanotubes deposited on a chip-like substrate. In theory, the small size of the nanotubes allows for very high density memories. Nantero also refers to it as NRAM.

All software, when run, resides in the random access memory (RAM) of a computer. Memory requirements are defined after considering demands of the application, operating system, supporting software and files, and other running processes. Optimal performance of other unrelated software running on a multi-tasking computer system is also considered when defining this requirement.

PRAM consistency (pipelined random access memory) also known as FIFO consistency. All processes see memory writes from one process in the order they were issued from the process. Writes from different processes may be seen in a different order on different processes. Only the write order needs to be consistent, thus the name pipelined.

Big memory computers are machines with a large amount of RAM (random-access memory) memory. The computers are required for databases, graph analytics, or more generally, data science and big data. Some database systems are designed to run mostly in memory, rarely if ever retrieving data from disk or flash memory. See list of in-memory databases.

Mobile DDR: Samsung K4X2G323PD-8GD8 LPDDR, an abbreviation for Low-Power Double Data Rate, also known as Low-Power DDR SDRAM or LPDDR SDRAM, is a type of double data rate synchronous dynamic random-access memory that consumes less power and is targeted for mobile computers. It is also known as Mobile DDR, and abbreviated as mDDR.

The first SRLs were developed in the 1980s. Recently, they have been of interest as potential random-access memory storage devices for all-optical computers. Semiconductor ring lasers are literally ring-shaped optical waveguides with a lasing medium. They have the ability to trap light in a ring, and recirculate it continuously as long as they remain powered.

Mac 512K back panel The Macintosh 512K is a personal computer that was designed, manufactured and sold by Apple Computer, inc. from September 1984 to April 1986. It is the first update to the original Macintosh 128K. It was virtually identical to the previous Macintosh, differing primarily in the amount of built-in random-access memory.

When the Mark I started running in 1951, reliability was poor. The primary concern was the drum memory system, which broke down all the time. Additionally, the machine used 4,200 thermionic valves, mostly EF50 pentodes and diodes that had to be replaced constantly. The Williams tubes, used as random access memory and registers, were reliable but required constant maintenance.

Google cloud shell, is an online bash shell based on debian. The free tier (included with all Gmail accounts), includes 1.7 Gigabytes of Random-access memory, and a persistent 5 gigabyte home directory. Aside from the home, and root directories, cloud shell environment is volatile. The editor in Google Cloud Shell is based on Eclipse Theia.

When it was introduced, the 21174 was priced at US$142 in quantities of 1,000.Gwennap 1997 The 21174 contains a memory controller and PCI controller. The memory controller supported up to 512 MB of synchronous dynamic random access memory (SDRAM) and accesses it via a 128-bit memory bus. The memory can be either ECC or parity protected.

WO/2001/065712 "Radio Frequency identification Transponder". Tag temporary settings, such as the time stamp, are stored in temporary random-access memory (TRAM)WO/2007/030863 "An Improved RFID Device". that retains data contents during power outages caused by switching of the powering field in orientation-insensitive interrogators.WO/1989/005530 "Antenna Structure for Providing a Uniform Field".

For comparison the Intel i7 processor uses 156 watts of power. Four DDR3 memory controllers are on each chip, connected to the 2D-mesh as well. These controllers are capable of addressing 64 GB of random-access memory. The DDR3 memory is used to help each tile communicate with the others, without them the chip would not be functional.

In video game systems, bank switching allowed larger games to be developed for play on existing consoles. Bank switching originated in minicomputer systems. Many modern microcontrollers and microprocessors use bank switching to manage random-access memory, non-volatile memory, input- output devices and system management registers in small embedded systems. The technique was common in 8-bit microcomputer systems.

Technically the digital matrix comprises stable digital storage mechanisms (which retain the data when switched off) rather than volatile random access memory. Conceptually as there is no need for this storage to be in the physical presence of the artist then online and remote storage (including the Internet) may form as a whole or in part the digital matrix.

With strong competitive pressures, the technology employed for each component of a computer system--principally CPU, memory, and offline storage-- is typically selected to minimize the cost needed to attain a given level of performance. Though both microprocessor and memory are implemented as integrated circuits, the prevailing technology used for each differs; microprocessor technology optimizes speed and memory technology optimizes density. For this reason, the integration of memory and processor in the same chip has (for the most part) been limited to static random-access memory (SRAM), which may be implemented using circuit technology optimized for logic performance, rather than the denser and lower-cost dynamic random-access memory (DRAM), which is not. Microprocessor access to off-chip memory costs time and power, however, significantly limiting processor performance.

The invention of the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements. MOS memory was developed by John Schmidt at Fairchild Semiconductor in 1964. In addition to higher performance, MOS semiconductor memory was cheaper and consumed less power than magnetic core memory. In 1965, J. Wood and R. Ball of the Royal Radar Establishment proposed digital storage systems that use CMOS (complementary MOS) memory cells, in addition to MOSFET power devices for the power supply, switched cross-coupling, switches and delay line storage. The development of silicon-gate MOS integrated circuit (MOS IC) technology by Federico Faggin at Fairchild in 1968 enabled the production of MOS memory chips. NMOS memory was commercialized by IBM in the early 1970s. MOS memory overtook magnetic core memory as the dominant memory technology in the early 1970s. The two main types of volatile random-access memory (RAM) are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Bipolar SRAM was invented by Robert Norman at Fairchild Semiconductor in 1963, followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964.

The 1103 is a dynamic random-access memory (DRAM) integrated circuit (IC) developed and fabricated by Intel. Introduced in October 1970, the 1103 was the first commercially available DRAM IC; and due to its small physical size and low price relative to magnetic-core memory, it replaced the latter in many applications.Jacob, Bruce et al. (2008). Memory Systems: Cache, DRAM, Disk.

Throughout, Wang had always offered maintenance services for the 2200. Wang 2200 Basic2 code can run on PCs and Unix systems using compilers and runtime libraries sold by NiakwaNiakwa or Kerridge.Kerridge These allow accessing the much larger, inexpensive random- access memory and disk space available on modern hardware. The programs run many times faster than they did on the 2200 hardware.

Spintronics is used in disk drives for data storage and in magnetic random-access memory. Electronic spin is generally short-lived and fragile, but the spin-based information in current devices needs to travel only a few nanometers. However, in processors, the information must cross several tens of micrometers with aligned spins. Graphene is the only known candidate for such behavior.

Read heads of magnetic hard drives are based on the GMR or TMR effect. Motorola developed a first-generation 256 kb magnetoresistive random-access memory (MRAM) based on a single magnetic tunnel junction and a single transistor that has a read/write cycle of under 50 nanoseconds.Spintronics. Sigma-Aldrich. Retrieved on 21 October 2013. Everspin has since developed a 4 Mb version.

The system contains of random-access memory (RAM) consisting of of FCRAM developed by Fujitsu, with a peak bandwidth of . The console contains two separate screens. The top screen is a 15:9 (5:3) autostereoscopic liquid-crystal display (LCD) with a resolution of (effectively per eye, or WQVGA). On the original 3DS, the screen measures , while on the 3DS XL it measures .

Data degradation in dynamic random-access memory (DRAM) can occur when the electric charge of a bit in DRAM disperses, possibly altering program code or stored data. DRAM may be altered by cosmic rays or other high-energy particles. Such data degradation is known as a soft error. ECC memory can be used to mitigate this type of data degradation.

MAI Systems Corp. v. Peak Computer, Inc., 991 F.2d 511 (9th Cir. 1993), was a case heard by the United States Court of Appeals for the Ninth Circuit which addressed the issue of whether the loading of software programs into random- access memory (RAM) by a computer repair technician during maintenance constituted an unauthorized software copy and therefore a copyright violation.

Eventide BD600 Broadcast Delay In 1977, the capacity of RAM (random-access memory) had reached 16 kilobits per chip, enough to think about using computerized digital audio means to create a sufficient delay for content deletion. By storing audio digitally, it was possible to move a "virtual tape head" along recorded audio. Eventide, Inc. created the first digital broadcast delay for this purpose.

The DEC 7000 AXP and DEC 10000 AXP supported two types of memory module, the MS7AA and the MS7BB, which differ in function. The MS7AA provided dynamic random access memory (DRAM) for implementing the main memory, whereas the MS7BB provided a non-volatile cache for accelerating Network File System (NFS) performance when used in conjunction with Prestoserve software from Legato Systems.

In October 2010, Adesto acquired intellectual property and patents related to Conductive Bridging Random Access Memory (CBRAM) technology from Qimonda AG, and their first CBRAM product began production in 2011. In 2015, the company held an initial public offering under the symbol IOTS, which entered the market at $5 per share. Underwriters included Needham & Company, Oppenheimer & Co. Inc., and Roth Capital Partners.

A random-access memory digital-to-analog converter (RAMDAC) is a combination of three fast digital-to-analog converters (DACs) with a small static random- access memory (SRAM) used in computer graphics display controllers to store the color palette and to generate the analog signals (usually a voltage amplitude) to drive a color monitor. The logical color number from the display memory is fed into the address inputs of the SRAM to select a palette entry to appear on the data output of the SRAM. This entry is composed of three separate values corresponding to the three components (red, green, and blue) of the desired physical color. Each component value is fed to a separate DAC, whose analog output goes to the monitor, and ultimately to one of its three electron guns (or equivalent in non-CRT displays).

Intel 1103, a 1970 metal-oxide-semiconductor (MOS) dynamic random-access memory (DRAM) chip. The invention of the MOSFET (metal-oxide-semiconductor field-effect transistor), also known as the MOS transistor, by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements, a function previously served by magnetic cores. The first modern memory cells were introduced in 1964, when John Schmidt designed the first 64-bit p-channel MOS (PMOS) static random-access memory (SRAM). SRAM typically has six- transistor cells, whereas DRAM (dynamic random-access memory) typically has single-transistor cells. In 1965, Toshiba's Toscal BC-1411 electronic calculator used a form of capacitive bipolar DRAM, storing 180-bit data on discrete memory cells, consisting of germanium bipolar transistors and capacitors.Toshiba "Toscal" BC-1411 Desktop Calculator MOS technology is the basis for modern DRAM. In 1966, Dr. Robert H. Dennard at the IBM Thomas J. Watson Research Center was working on MOS memory. While examining the characteristics of MOS technology, he found it was capable of building capacitors, and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, while the MOS transistor could control writing the charge to the capacitor.

The Traffic Service Position System (TSPS) was developed by Bell Labs in Columbus, Ohio to replace traditional cord switchboards. The first TSPS was deployed in 1969 and used the Stored Program Control-1A CPU, "Piggyback" twistor memory (a proprietary technology developed by Bell Labs similar to core memory) and Insulated Gate Field Effect Transistor solid state memory devices similar to dynamic random access memory.

GDDR4 SDRAM, an abbreviation for Graphics Double Data Rate 4 Synchronous Dynamic Random-Access Memory, is a type of graphics card memory specified by the JEDEC Semiconductor Memory Standard. It is a rival medium to Rambus's XDR DRAM. GDDR4 is based on DDR3 SDRAM technology and was intended to replace the DDR2-based GDDR3, but it ended up being replaced by GDDR5 within a year.

The MOSFET structure was invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959. The MOS capacitor was later widely adopted as a storage capacitor in memory chips, and as the basic building block of the charge-coupled device (CCD) in image sensor technology. In dynamic random-access memory (DRAM), each memory cell typically consists of a MOSFET and MOS capacitor.

A next step in speeding routers was to have a specialized forwarding processor separate from the main processor. There was still a single path, but forwarding no longer had to compete with control in a single processor. The fast routing processor typically had a small FIB, with hardware memory (e.g., static random access memory (SRAM)) faster and more expensive than the FIB in main memory.

Prior to the development of integrated read-only memory (ROM) circuits, permanent (or read-only) random-access memory was often constructed using diode matrices driven by address decoders, or specially wound core rope memory planes. Semiconductor memory began in the 1960s with bipolar memory, which used bipolar transistors. While it improved performance, it could not compete with the lower price of magnetic core memory.

Masuoka attended Tohoku University in Sendai, Japan, where he earned an undergraduate degree in engineering in 1966 and doctorate in 1971. He joined Toshiba in 1971. There, he invented stacked- gate avalanche-injection metal–oxide–semiconductor (SAMOS) memory, a precursor to electrically erasable programmable read-only memory (EEPROM) and flash memory. In 1976, he developed dynamic random-access memory (DRAM) with a double poly-Si structure.

Data in use is an information technology term referring to active data which is stored in a non-persistent digital state typically in computer random- access memory (RAM), CPU caches, or CPU registers. Scranton, PA data scientist Daniel Allen in 1996 proposed Data in use as a complement to the terms data in transit and data at rest which together define the three states of digital data.

In the design of modern computers, memory geometry describes the internal structure of random-access memory. Memory geometry is of concern to consumers upgrading their computers, since older memory controllers may not be compatible with later products. Memory geometry terminology can be confusing because of the number of overlapping terms. The geometry of a memory system can be thought of as a multi-dimensional array.

32x32 core memory plane storing 1024bits of data. On December 11, 1946 Freddie Williams applied for a patent on his cathode-ray tube (CRT) storing device (Williams tube) with 128 40-bit words. It was operational in 1947 and is considered the first practical implementation of random-access memory (RAM). In that year, the first patent applications for magnetic-core memory were filed by Frederick Viehe.

The 4 MB array module is an eight- layer printed circuit board populated by metal oxide semiconductor (MOS) dynamic random access memory (DRAM) devices and medium-scale integration (MSI) FAST transistor-transistor logic (TTL) devices in roughly equal numbers. The 16 MB array module is similar to the 4 MB module, but contains eight surface- mounted daughter boards, each containing 2 MB of memory built from DRAMs.

A non-volatile dual in-line memory module (NVDIMM) is a type of random-access memory for computers. Non-volatile memory is memory that retains its contents even when electrical power is removed, for example from an unexpected power loss, system crash, or normal shutdown. "Dual in-line" identifies the memory as using the DIMM package. NVDIMMs improve application performance and system crash recovery time.

The cache was built from 12 ns pipelined burst static random access memory (PBSRAM). Memory controller supported 8 to 256 MB of fast page mode (FPM) DRAM in eight banks. The L2 cache and memory were accessed using the system bus, a 72-bit wide bus, of which 64 bits were for data. The AFX interface enabled AFX graphics cards to directly access the memory.

The use of a spin valve in MRAM. 1: spin valve as a memory cell (arrows indicate the presence of ferromagnetic layers), 2: row line, 3: column line. Ellipses with arrows denote the magnetic field lines around the row and column lines when electric current flows through them. A cell of magnetoresistive random-access memory (MRAM) has a structure similar to the spin-valve sensor.

The MOS capacitor is part of the MOSFET structure, where the MOS capacitor is flanked by two p-n junctions. The MOS capacitor is widely used as a storage capacitor in memory chips, and as the basic building block of the charge-coupled device (CCD) in image sensor technology. In DRAM (dynamic random-access memory), each memory cell typically consists of a MOSFET and MOS capacitor.

Live data values are kept in conveniently addressable physical resources (individual registers, register files, static random-access memory (SRAM), or operand forwarding from functional units) and generally not moved for the duration of their belt lifetime. Instruction decoder maps logical belt positions to physical locations. The mapping is updated to reflect the changes of logical position arising from newly dropped results. A patent on the belt was granted in 2016.

SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data. Commercial use of SRAM began in 1965, when IBM introduced the SP95 memory chip for the System/360 Model 95. Dynamic random-access memory (DRAM) allowed replacement of a 4 or 6-transistor latch circuit by a single transistor for each memory bit, greatly increasing memory density at the cost of volatility.

Random-access memory (RAM) is used to store both program instructions and data. Typically, both need to be present in memory in order for a program to execute. Often multiple programs will want access to memory, frequently demanding more memory than the computer has available. The kernel is responsible for deciding which memory each process can use, and determining what to do when not enough memory is available.

Computer memory operates at a high speed, for example random-access memory (RAM), as a distinction from storage that provides quick-to-access information but sending higher capacities. If needed, contents of the computer memory can be transferred to secondary storage; a very common way of doing this is through a memory management technique called virtual memory. An archaic synonym for memory is store.A.M. Turing and R.A. Brooker (1952).

Developed by Yoot Saito of OpenBook, SimTower was originally titled The Tower. It works on computers that can run the Microsoft Windows or Macintosh System 7 operating systems; the game will operate on 68k-based Macs at the minimum. It requires 8-bit colors and four megabytes of random-access memory. Graphics and sounds used in SimTower are similar to previous Sim games, and high resolution graphics are also used.

Ultimately it was not commercially successful, after multiple renames, delays and a changing market place. Its manufacturer calling in the receivers in 1986 with significant debt. It was developed by British company Intelligent Software and marketed by Enterprise Computers. Its two variants are the Enterprise 64, with 64 kilobytes (KB, 65,536 bytes) of Random Access Memory (RAM), and the Enterprise 128, with 128 KB (131,072 bytes) of RAM.

In 1986 he discovered the antiparallel exchange coupling between ferromagnetic layers separated by a thin non-ferromagnetic layer, and in 1988 he discovered the giant magnetoresistive effect (GMR). GMR was simultaneously and independently discovered by Albert Fert from the Université de Paris Sud. It has been used extensively in read heads of modern hard drives. Another application of the GMR effect is non-volatile, magnetic random access memory.

SmartDrive (or SMARTDRV) is a disk caching program shipped with MS-DOS versions 4.01 through 6.22 and Windows 3.0 through Windows 3.11. It improves data transfer rates by storing frequently accessed data in random-access memory (RAM). Early versions of SmartDrive were loaded through a device driver named . Versions 4.0 and later were loaded through an executable file named , which could be run at user's discretion or at boot time via .

A save state is a form of a saved game in emulators. A save state is generated when the emulator stores the contents of random-access memory of an emulated program to disk. Save states enable players to save their games even when the emulated game or system does not support the feature. For instance, save states may be used to circumvent saving restrictions or to abuse RNG.

In computing, sequential access memory (SAM) is a class of data storage devices that read stored data in a sequence. This is in contrast to random access memory (RAM) where data can be accessed in any order. Sequential access devices are usually a form of magnetic storage or optical storage. While sequential access memory is read in sequence, arbitrary locations can still be accessed by "seeking" to the requested location.

Kenichi Osada is an electrical engineer from the Hitachi LTD., Tokyo, Japan, known for his work on static random-access memory. He won an award from the Japan Society for the Promotion of Science in 2013 for his work on reconfigurable analog integrated circuit design. He was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2016, "for contributions to reliable and low-power nanoscale SRAM".

Since a memory dump can be easily performed by executing a cold boot attack, storage of sensitive data in RAM, like encryption keys for full disk encryption is unsafe. Several solutions have been proposed for storing encryption keys in areas, other than random access memory. While these solutions may reduce the chance of breaking full disk encryption, they provide no protection of other sensitive data stored in memory.

Its developing company Nantero give it its common name, NRAM. When compared to other forms of nonvolatile random access memory, NanoRAM has several advantages, but one really stands out. NRAM is believed to be within a variety of new memory systems, a variety which many people believe to be universal. Nantero claims that Nano-RAM (NRAM) could eventually replace almost all memory systems from flash to DRAM to SRAM.

MAR, which is found inside the CPU, goes either to the RAM (random access memory) or cache. The memory address register is half of a minimal interface between a microprogram and computer storage; the other half is a memory data register. In general, MAR is a parallel load register that contains the next memory address to be manipulated. For example, the next address to be read or written.

SoCs must have semiconductor memory blocks to perform their computation, as do microcontrollers and other embedded systems. Depending on the application, SoC memory may form a memory hierarchy and cache hierarchy. In the mobile computing market, this is common, but in many low-power embedded microcontrollers, this is not necessary. Memory technologies for SoCs include read-only memory (ROM), random-access memory (RAM), Electrically Erasable Programmable ROM (EEPROM) and flash memory.

Creating tables stored in random-access memory is a common code optimization technique in computer programming, where the use of such tables speeds up calculations in those cases where a table lookup is faster than the corresponding calculations (particularly if the computer in question doesn't have a hardware implementation of the calculations). In essence, one trades computing speed for the computer memory space required to store the tables.

Hynix GDDR SDRAM Graphics DDR SDRAM (GDDR SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) specifically designed for graphics processing units (GPUs). GDDR SDRAM is distinct from the more widely known types of DDR SDRAM, such as DDR3, although they share some of the same features--including double data rate data transfers. , GDDR SDRAM has been succeeded by GDDR2, GDDR3, GDDR4, GDDR5, GDDR5X, and GDDR6.

Eatoni engineers claim LetterWise has relatively low storage requirements compared to dictionary based solutions. The Eatoni website claims in the storage space typically required for a single dictionary database (30–100kb) it would be possible to fit LetterWise databases for 10–20 different languages. The website says device random-access memory requirements are similarly low, typically under 2kb, and there has been an implementation for 200 bytes of available memory.

In computer science, resource contention is a conflict over access to a shared resource such as random access memory, disk storage, cache memory, internal buses or external network devices. A resource experiencing ongoing contention can be described as oversubscribed. Resolving resource contention problems is one of the basic functions of operating systems. Various low-level mechanisms can be used to aid this, including locks, semaphores, mutexes and queues.

Attempts to induce the glassy–crystal transformation of chalcogenides by electrical means form the basis of phase-change random-access memory (PC-RAM). This technology has been developed to near commercial use by ECD Ovonics. For write operations, an electric current supplies the heat pulse. The read process is performed at sub-threshold voltages by utilizing the relatively large difference in electrical resistance between the glassy and crystalline states.

Access to shared memory (32 KB random-access memory (RAM); 32 KB read-only memory (ROM)) is controlled via round-robin scheduling by an internal computer bus controller termed the hub. Each cog also has access to two dedicated hardware counters and a special video generator for use in generating timing signals for Phase Alternating Line (PAL), National Television System Committee (NTSC), Video Graphics Array (VGA), servomechanism-control, and others.

Intel also created one of the first microcomputers in 1973. Intel opened its first international manufacturing facility in 1972, in Malaysia, which would host multiple Intel operations, before opening assembly facilities and semiconductor plants in Singapore and Jerusalem in the early 1980s, and manufacturing and development centres in China, India and Costa Rica in the 1990s. By the early 1980s, its business was dominated by dynamic random-access memory (DRAM) chips.

PRAM algorithms cannot be parallelized with the combination of CPU and dynamic random-access memory (DRAM) because DRAM does not allow concurrent access; but they can be implemented in hardware or read/write to the internal static random-access memory (SRAM) blocks of a field-programmable gate array (FPGA), it can be done using a CRCW algorithm. However, the test for practical relevance of PRAM (or RAM) algorithms depends on whether their cost model provides an effective abstraction of some computer; the structure of that computer can be quite different than the abstract model. The knowledge of the layers of software and hardware that need to be inserted is beyond the scope of this article. But, articles such as demonstrate how a PRAM-like abstraction can be supported by the explicit multi-threading (XMT) paradigm and articles such as demonstrate that a PRAM algorithm for the maximum flow problem can provide strong speedups relative to the fastest serial program for the same problem.

Frank Zhigang Wang is a Chinese computer scientist and Professor of Future Computing and a former Head of the School of Computing at the University of Kent, England. He was previously Professor and Chair in e-Science and Grid Computing, Director of Centre for Grid Computing, Cambridge-Cranfield High Performance Computing Facility. In 1994, he invented spin-tunneling random access memory. In 2003, Frank proposed a new concept of Grid-oriented Storage architecture.

The system used electrostatic storage, consisting of 36 Williams tubes with a capacity of 1024 bits each, giving a total random access memory of 1024 words of 36 bits each. Each of the 36 Williams tubes was five inches in diameter. A magnetic drum memory provided 16,384 words. Both the electrostatic and drum memories were directly addressable: addresses 0 through 01777 (Octal) were in electrostatic memory and 040000 through 077777 (Octal) were on the drum.

She is a Mark II Surplus UNIVAC with 256 gigabytes of random-access memory. Karen assumes various jobs at the Chum Bucket, including busser, chef and cashier; she rarely has to fulfill them because of the restaurant's unpopularity. She also tends to stay more focused than Plankton on the core mission of stealing Krabs' formula. Karen often reminds him to stay on task and encourages him to keep going when he loses confidence.

Volatile data is any data that is stored in memory, or exists in transit, that will be lost when the computer loses power or is turned off. Volatile data resides in registries, cache, and random access memory (RAM). The investigation of this volatile data is called “live forensics”. When seizing evidence, if the machine is still active, any information stored solely in RAM that is not recovered before powering down may be lost.

The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory. Today, the most common memory cell architecture is MOS memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM.

A RAM drive (also called a RAM disk) is a block of random-access memory (primary storage or volatile memory) that a computer's software is treating as if the memory were a disk drive (secondary storage). It is sometimes referred to as a virtual RAM drive or software RAM drive to distinguish it from a hardware RAM drive that uses separate hardware containing RAM, which is a type of battery-backed solid-state drive.

The speed of the МИР-2 machine is about 12,000 op / s. The capacity of the random access memory (12-μs circulation cycle) is 8,000 13-bit symbols. The read-only memory has a capacity of about 1.6 million bits with a cycle of 4 μs, which is enough to store several tens of thousands of micro-commands. There is a buffer memory for output information with a volume of 4000 10-bit words.

DIMM : 168 pins and two notches. PC100 is a standard for internal removable computer random access memory, defined by the JEDEC. PC100 refers to Synchronous DRAM operating at a clock frequency of 100 MHz, on a 64-bit-wide bus, at a voltage of 3.3 V. PC100 is available in 168-pin DIMM and 144-pin SO-DIMM form factors. PC100 is backward compatible with PC66 and was superseded by the PC133 standard.

However, this configuration of inverter feedback can be used as a storage element and it is the basic building block of static random access memory or SRAM. The stages of the ring oscillator are often differential stages, that are more immune to external disturbances. This renders available also non-inverting stages. A ring oscillator can be made with a mix of inverting and non-inverting stages, provided the total number of inverting stages is odd.

There were eight pages of Williams cathode ray tube (CRT) random access memory as the fast primary store, and 512 pages of the secondary store on a magnetic drum. Each page consisted of thirty-two 40-bit words, which appeared as sixty-four 20-bit lines on the CRTs. The programmer had to control all transfers between electronic and magnetic storage, and the transfers were slow and had to be reduced to a minimum.

Between 1988 and 1991, DCT video compression was widely adopted as the video coding standard for HDTV implementations, enabling the development of practical digital HDTV. Dynamic random-access memory (DRAM) was also adopted as frame-buffer semiconductor memory, with the DRAM semiconductor industry's increased manufacturing and reducing prices important to the commercialization of HDTV. Since 1972, International Telecommunication Union's radio telecommunications sector (ITU-R) had been working on creating a global recommendation for Analog HDTV.

The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on the spin orientation. The main application of GMR is magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.

Today, random-access memory takes the form of integrated circuits. Strictly speaking, modern types of DRAM are not random access, as data is read in bursts, although the name DRAM / RAM has stuck. However, many types of SRAM, ROM, OTP, and NOR flash are still random access even in a strict sense. RAM is normally associated with volatile types of memory (such as DRAM memory modules), where its stored information is lost if the power is removed.

Both GMR and TMR effects can be used to create a non-volatile main memory for computers, such as the so-called magnetic random access memory or MRAM. Commercial production of nanoelectronic memory began in the 2010s. In 2013, SK Hynix began mass- production of 16nm NAND flash memory, and Samsung Electronics began production of 10nm multi-level cell (MLC) NAND flash memory. In 2017, TSMC began production of SRAM memory using a 7 nm process.

The Mano machine is a computer theoretically described by M. Morris Mano. It contains a central processing unit, random access memory, and an input-output bus. Its limited instruction set and small address space limit it to use as a Microcontroller. But it can easily be expanded to have a 32-bit accumulator register, and 28-bit addressing using a HDL language like Verilog or VHDL; And at the same time, make room for new instructions.

Reduced Latency DRAM (RLDRAM) is a type of specialty dynamic random-access memory (DRAM) with a SRAM-like interface originally developed by Infineon Technologies. It is a high-bandwidth, semi-commodity, moderately low-latency (relative to contemporaneous SRAMs) memory targeted at embedded applications (such as computer networking equipment) requiring memories that have moderate costs and low latency (relative to commodity DRAM); and capacities greater than those offered by SRAMs.Jacob, Bruce et al. (2008). Memory Systems: Cache, DRAM, Disk.

On the other hand, the hardware itself had become powerful enough to handle the API processing overhead. The maximum amount of supported physical random-access memory (RAM) in Windows NT 4.0 is 4 GB, which is the maximum possible for a purely 32-bit x86 operating system. By comparison, Windows 95 fails to boot on computers with more than approximately 480 MB of memory. Like previous versions of NT, version 4.0 can run on multiple processor architectures.

From 1997 to 2004, Tseng was an active researcher in nanotechnology at The MITRE Corporation, Harvard University, and Stanford University. At MITRE, he co-authored a Science journal article entitled "Toward Nanocomputers". At Harvard, he earned an A.B. in Chemistry & Physics & Mathematics in 2001 and co-authored a Science perspective entitled "Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing" which is the technology behind the company Nantero. At Stanford, he conducted research in the Goldhaber- Gordon group.

SK hynix Inc. () is a South Korean memory semiconductor supplier of dynamic random-access memory (DRAM) chips and flash memory chips. Hynix is the world's second-largest memory chipmaker (after Samsung Electronics) and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing sites in Korea, the United States, ChinaHynix completes new chip plant in China, Yonhap News Agency, 17 June 2010.

Deep neural networks can be potentially improved by deepening and parameter reduction, while maintaining trainability. While training extremely deep (e.g., 1 million layers) neural networks might not be practical, CPU-like architectures such as pointer networks and neural random-access machines overcome this limitation by using external random-access memory and other components that typically belong to a computer architecture such as registers, ALU and pointers. Such systems operate on probability distribution vectors stored in memory cells and registers.

Muhammad Maqbool, Kyle Main, and Martin Kordesch, "Titanium-doped sputter-deposited AlN infrared whispering gallery mode microlaser on optical fibers," Opt. Lett. 35, 3637-3639 (2010) Maqbool and Main plan to expand their work to include the development of nano scale SRLs on carbon nanotubes. SRLs may serve as the basis of a new form of optical random access memory. The direction of circulation of light (clockwise or counterclockwise) would indicate the polarity of the bit (0 or 1).

The name comes from magnetic core memory,Oxford English Dictionary, s.v. 'core' the principal form of random access memory from the 1950s to the 1970s. The name has remained long after magnetic core technology became obsolete. Earliest core dumps were paper printouts of the contents of memory, typically arranged in columns of octal or hexadecimal numbers (a "hex dump"), sometimes accompanied by their interpretations as machine language instructions, text strings, or decimal or floating-point numbers (cf. disassembler).

Because of its nature, data in use is of increasing concern to businesses, government agencies and other institutions. Data in use, or memory, can contain sensitive data including digital certificates, encryption keys, intellectual property (software algorithms, design data), and personally identifiable information. Compromising data in use enables access to encrypted data at rest and data in motion. For example, someone with access to random access memory can parse that memory to locate the encryption key for data at rest.

It is developed for and by Joyent, but is open-source and free for anyone to use. SmartOS is an in-memory operating system and boots directly into random-access memory. It supports various boot mechanisms such as booting from USB thumbdrive, ISO Image, or over the network via PXE boot. One of the many benefits of employing this boot mechanism is that operating system upgrades are trivial, simply requiring a reboot from a newer SmartOS image version.

A sampler can record and digitize audio, store it in random-access memory (RAM), and play it back. Samplers typically allow a user to edit a sample and save it to a hard disk, apply effects to it, and shape it with the same tools that synthesizers use. They also may be available in either keyboard or rack-mounted form. Instruments that generate sounds through sample playback, but have no recording capabilities, are known as "ROMplers".

MemTest86 and Memtest86+ are memory test software programs designed to test and stress test an x86 architecture computer's random access memory (RAM) for errors, by writing test patterns to most memory addresses, reading back the data, and comparing for errors. Each tries to verify that the RAM will accept and correctly retain arbitrary patterns of data written to it, that there are no errors where different bits of memory interact, and that there are no conflicts between memory addresses.

In static random-access memory (SRAM), another type of semiconductor memory, the data is not stored as charge on a capacitor, but in a pair of a cross-coupled inverters, so SRAM does not need to be refreshed. The two basic types of memory have advantages and disadvantages. Static memory can be considered permanent while powered on, i.e. once written the memory stays until specifically changed and thus, its use tends to be simple in terms of system design.

Grant earned his bachelor's degree from Columbia College of Columbia University in 1968 and his law degree from the University of Denver College of Law, graduating summa cum laude in 1971. He was a lawyer in private practice in Denver and Boise from 1972 through 1985. In 1985, Grant joined Micron Technology, a manufacturer of dynamic random access memory (DRAM), as the young company's first general counsel. It was a critical time for the U.S. semiconductor industry.

The VAX 8800 family central processing unit (CPU) operates at 22.22 MHz (45 ns cycle time) and is implemented with discrete emitter-coupled logic (ECL) devices spread over eight modules. The majority of the ECL devices are macrocell arrays with 1,200 logic gates, while the general-purpose registers and floating-point units are custom logic devices developed by Digital. The CPU has 64 KB of cache implemented with 10 ns and 15 ns ECL random access memory devices.

A boot sector is the sector of a persistent data storage device (e.g., hard disk, floppy disk, optical disc, etc.) which contains machine code to be loaded into random-access memory (RAM) and then executed by a computer system's built-in firmware (e.g., the BIOS, Das U-Boot, etc.). Usually, the very first sector of the hard disk is the boot sector, regardless of sector size (512 or 4096 bytes) and partitioning flavor (MBR or GPT).

In 2008, billion-transistor processors became commercially available. This became more commonplace as semiconductor fabrication advanced from the then-current generation of 65 nm processes. Current designs, unlike the earliest devices, use extensive design automation and automated logic synthesis to lay out the transistors, enabling higher levels of complexity in the resulting logic functionality. Certain high-performance logic blocks like the SRAM (static random-access memory) cell, are still designed by hand to ensure the highest efficiency.

Timna was the codename of a proposed central processing unit (CPU) family by Intel. The project was announced in 1999 and was designed in Haifa, Israel; it is named after the "Timna valley" in Israel. The chip was supposed to be Intel's first CPU with an integrated graphics processing unit (GPU) and random access memory (RAM) controller which was designed to work with the RDRAM type of RAM. The price of RDRAM did not drop as expected by Intel.

Sometimes both the integrated graphics and a dedicated graphics card can be used simultaneously to feed separate displays. The main advantages of integrated graphics include cost, compactness, simplicity and low energy consumption. The performance disadvantage of integrated graphics arises because the graphics processor shares system resources with the CPU. A dedicated graphics card has its own random access memory (RAM), its own cooling system, and dedicated power regulators, with all components designed specifically for processing video images.

The word "Core" in the name comes from magnetic-core memory, an obsolete random-access memory technology. The first description of the Redcode language was published in March 1984, in Core War Guidelines by D. G. Jones and A. K. Dewdney. The game was introduced to the public in May 1984, in an article written by Dewdney in Scientific American. Dewdney revisited Core War in his "Computer Recreations" column in March 1985, and again in January 1987.

Non-volatile memory cache mirroring in a MetroCluster and HA Like many competitors, NetApp ONTAP systems utilizing memory as a much faster storage medium for accepting and caching data from hosts and, most importantly, for data optimization before writes which greatly improves the performance of such storage systems. While competitors widely using non- volatile random-access memory (NVRAM) to preserve data in it during unexpected events like a reboot for both write caching and data optimization, NetApp ONTAP systems using ordinary random-access memory (RAM) for data optimization and dedicated NVRAM or NVDIMM for logging of initial data in an unchanged state as they came from hosts similarly as transaction logging done in Relational databases. So in case of disaster, naturally, RAM will be automatically cleared after reboot, and data stored in non-volatile memory in the form of logs called NVLOGs will survive after reboot and will be used for restore consistency. All changes and optimizations in ONTAP systems done only in RAM, which helps to reduce the size of non-volatile memory for ONTAP systems.

Such registers were relatively large and too costly to use for large amounts of data; generally only a few dozen or few hundred bits of such memory could be provided. The first practical form of random-access memory was the Williams tube starting in 1947. It stored data as electrically charged spots on the face of a cathode ray tube. Since the electron beam of the CRT could read and write the spots on the tube in any order, memory was random access.

Main memory (random-access memory, RAM) is usually composed of a collection of DRAM memory chips, where a number of chips can be grouped together to form a memory bank. It is then possible, with a memory controller that supports interleaving, to lay out these memory banks so that the memory banks will be interleaved. Data in DRAM is stored in units of pages. Each DRAM bank has a row buffer that serves as a cache for accessing any page in the bank.

MC families. Signifying features of the architecture are up to 4,096 fast on-chip registers which may be used as accumulators, pointers, or as ordinary random-access memory (RAM). A 16-bit address space for between 1 kibibyte (KB) and 64 KB of either programmable read-only memory (PROM, OTP), read-only memory (ROM), or flash memory, are used to store code and constants, and there is a second 16-bit address space which can be used for large applications.

CPU logic is implemented with two emitter-coupled logic gate array IC types, a 550-gate part with a 250 picosecond (ps) gate delay and a 1,500-gate part with a 450 ps gate delay. The main memory is implemented with 16 Kbit complementary metal-oxide- semiconductor static random access memory ICs with an access time of 40 ns. The S-810/20 supports 64 to 256 megabyte (MB) of main memory, whereas the other models support 32 to 128 MB.

A special process, called the reincarnation server, periodically pings each device driver. If the driver dies or fails to respond correctly to pings, the reincarnation server automatically replaces it with a fresh copy. Detecting and replacing non- functioning drivers is automatic, with no user action needed. This feature does not work for disk drivers at present, but in the next release the system will be able to recover even disk drivers, which will be shadowed in random- access memory (RAM).

The Gen-Z consortium is a trade group of technology vendors involved in designing CPUs, random access memory, servers, storage, and accelerators. The goal was an open and royalty-free "memory-semantic" protocol, which is not limited by the memory controller of a CPU. The basic operations consist of simple loads and stores with the addition of modular extensions. It is intended to be used in a switched fabric or point-to-point where each device connects using a standard connector.

In the terms of that agreement, Blizzard specifically prohibited "the use of bots or third-party software to modify the WoW experience." Thus, the Court found that players who use the Glider program violated the ToU and were not licensed to use WoW. As with most software, the client software of WoW is copied during the program's operation from the computer's hard drive to the computer's random access memory (RAM). Citing the prior Ninth Circuit case of MAI Systems Corp. v.

The Yamaha DX21 is a digital bi-timbral programmable algorithm synthesizer with a four operator synth voice generator which was released in 1985. It uses sine wave-based Frequency Modulation (FM) synthesis. It has two FM tone generators and a 32-voice Random Access Memory (RAM), 32 user voices and 128 Read Only Memory (ROM) factory preset sounds. As a programmable synth, it enables users to create their own unique synthesized tones and sound effects by using the algorithms and oscillators.

The modules allow easy extension of the operating systems' capabilities as required. Dynamically loadable modules incur a small overhead when compared to building the module into the operating system image. However, in some cases, loading modules dynamically (as-needed) helps to keep the amount of code running in kernel space to a minimum; for example, to minimize operating system footprint for embedded devices or those with limited hardware resources. Namely, an unloaded module need not be stored in scarce random access memory.

Core memory and bubble memory fell to random access memory. Wrens The invention of the word processor, spreadsheet and database greatly improved office productivity over the old paper, typewriter and filing cabinet methods. The economic advantage given to businesses led to economic efficiencies in computers themselves. Cost-effective CPUs led to thousands of industrial and home-brew computer designs, many of which became successful; a home-computer boom was led by the Apple II, the ZX80 and the Commodore PET.

The PrivateCore vCage product portfolio comprises vCage Manager and vCage Host. vCage Manager validates the integrity of x86 servers running Linux as well as the vCage Host. vCage Host installs on bare-metal servers and provides a hardened hypervisor based on KVM that can secure server random access memory (RAM) with AES encryption. vCage Host does this by loading a secure hypervisor into CPU cache and acting as a gateway to encrypt memory paging in and out between the CPU cache and RAM.

As RAM stands for Random Access Memory, it works more or less like a hard-drive and was designed for corporate back-up use. Developed in 1996, DVD-RAM is a rewritable optical disc originally encased in a cartridge. Currently available in standard 4.7 GB (and sometimes in other sizes), it is useful in applications that require quick revisions and rewriting. It can only be read in drives that are DVD-RAM compatible, of which all multi-format drives are.

In computer science, memory virtualization decouples volatile random access memory (RAM) resources from individual systems in the data centre, and then aggregates those resources into a virtualized memory pool available to any computer in the cluster. The memory pool is accessed by the operating system or applications running on top of the operating system. The distributed memory pool can then be utilized as a high-speed cache, a messaging layer, or a large, shared memory resource for a CPU or a GPU application.

The maximum random access memory (RAM) installed in any computer system is limited by hardware, software and economic factors. The hardware may have a limited number of address bus bits, limited by the processor package or design of the system. Some of the address space may be shared between RAM, peripherals, and read-only memory. In the case of a microcontroller with no external RAM, the size of the RAM array is limited by the size of the integrated circuit die.

The computer is based around National Semiconductor's SC/MP CPU (INS8060) and shipped with 256 bytes of random access memory (RAM) as standard. It used an eight or nine red light-emitting diode (LED) seven segment display, there was also optional VDU supporting 32×16 text or 64×64 graphics. Input and output was a 20-key keyboard and reset switch. Cassette- based and PROM storage were optional extras; a sound card was not included but a design for one was provided.

In mid 2015, Intel announced the Optane brand for storage products based on 3D XPoint technology. Micron (using the QuantX brand) estimated the memory to be sold for about half the price of dynamic random- access memory (DRAM), but four to five times the price of flash memory. Initially, a wafer fabrication facility in Lehi, Utah, operated by IM Flash Technologies LLC (an Intel-Micron joint venture) made small quantities of 128 Gbit chips in 2015. They stack two 64 Gbit planes.

Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to MOS memory, where data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several MOS transistors per memory cell, and dynamic RAM (DRAM), which uses a single MOS transistor and MOS capacitor per cell.

Random-access memory (RAM /ræm/) is a form of computer data storage. A random-access device allows stored data to be accessed directly in any random order. In contrast, other data storage media such as hard disks, CDs, DVDs and magnetic tape, as well as early primary memory types such as drum memory, read and write data only in a predetermined order, consecutively, because of mechanical design limitations. Therefore, the time to access a given data location varies significantly depending on its physical location.

SWTPC 6800 microcomputer. The Hazeltine 1500 was a popular smart terminal introduced by Hazeltine Corporation in April 1977 at a price of $1,125 (). Using a microprocessor and semiconductor random access memory, it implemented the basic features of the earlier Hazeltine 2000 in a much smaller and less expensive system. It came to market just as the microcomputer revolution was taking off, and the 1500 was very popular among early hobbyist users. Two modified versions were introduced in June 1977, the $1,395 Hazeltine 1510 and $1,650 Hazeltine 1520.

This led to his development of a single- transistor DRAM memory cell. In 1967, Dennard filed a patent under IBM for a single-transistor DRAM (dynamic random-access memory) memory cell, based on MOS technology. MOS memory enabled higher performance, was cheaper, and consumed less power, than magnetic-core memory, leading to MOS memory overtaking magnetic core memory as the dominant computer memory technology by the early 1970s. Frank Wanlass, while studying MOSFET structures in 1963, noted the movement of charge through oxide onto a gate.

In computer science, in-memory processing is an emerging technology for processing of data stored in an in-memory database. Older systems have been based on disk storage and relational databases using SQL query language, but these are increasingly regarded as inadequate to meet business intelligence (BI) needs. Because stored data is accessed much more quickly when it is placed in random-access memory (RAM) or flash memory, in-memory processing allows data to be analysed in real time, enabling faster reporting and decision-making in business.

A PXE client will not be able to boot if it only receives an answer from a non PXE enabled DHCP server. After parsing a PXE enabled DHCP server DHCPOFFER, the client will be able to set its own network IP address, IP Mask, etc., and to point to the network located booting resources, based on the received TFTP Server IP address and the name of the NBP. The client next transfers the NBP into its own random-access memory (RAM) using TFTP, possibly verifies it (i.e.

Magnetic storage media can be classified as either sequential access memory or random access memory, although in some cases the distinction is not perfectly clear. The access time can be defined as the average time needed to gain access to stored records. In the case of magnetic wire, the read/write head only covers a very small part of the recording surface at any given time. Accessing different parts of the wire involves winding the wire forward or backward until the point of interest is found.

The secondary cache has a bandwidth of 10 GB/s and a latency of 40 cycles. It is 4-way set-associative, physically indexed and physically tagged with a line size of 128 bytes. The set- associativity was chosen to reduce the number of I/O pins. The L2 cache is implemented with using four 72 Mbit (9 MB) Enhanced Memory Systems Enhanced SRAM (ESRAM) chips, which despite its name, is an implementation of 1T-SRAM - dynamic random access memory (DRAM) with a SRAM-like interface.

SoftRAM and SoftRAM95 were system software products which claimed to double the available random-access memory in Microsoft Windows without the need for a hardware upgrade. However, it later emerged that the program did not even attempt to increase available memory. In July 1996, the developer of SoftRAM, Syncronys settled charges brought by the Federal Trade Commission of "false and misleading" claims in relation to the capability of the software. The product was rated the third "Worst Tech Product of All Time" by PC World in 2006.

Because the production used an entirely Silicon Graphics and IRIX-based tool pipeline, the programmers used $100,000 Silicon Graphics workstations instead of the $3,000 personal computers that were the standard at the time. Gavin created an algorithmic texture packer that would deal with the fact that the 512 × 240 video mode left too little texture memory. Meanwhile, Baggett created bidirectional 10x compressors that would reduce the 128-megabyte levels down to 12 megabytes and allow them to be compatible with the PlayStation's 2-megabyte random access memory.

John Bannister Goodenough ( ; born July 25, 1922) is an American materials scientist, a solid-state physicist, and a Nobel laureate in chemistry. He is a professor of mechanical engineering and materials science at the University of Texas at Austin. He is widely credited with the identification and development of the lithium-ion battery, for developing the Goodenough–Kanamori rules in determining the sign of the magnetic superexchange in materials, and for seminal developments in computer random access memory. Goodenough was born in Jena, Germany, to American parents.

VRAM is a common abbreviation for Video Random Access Memory, which is memory in a computer system that holds the pixels and other information displayed on a computer monitor. This is often different technology than other computer memory, to facilitate being read rapidly to draw the image. In some systems this memory cannot be read/written using the same methods as normal memory; it is not memory mapped. The term "VRAM" sometimes means a specific technology used in the 1980s to implement it, Dual-ported DRAM.

The most important piece of graphics hardware is the graphics card, which is the piece of equipment that renders out all images and sends them to a display. There are two types of graphics cards: integrated and dedicated. An integrated graphics card, usually by Intel to use in their computers, is bound to the motherboard and shares RAM(Random Access Memory) with the CPU, reducing the total amount of RAM available. This is undesirable for running programs and applications that use a large amount of video memory.

Apple File System does not provide checksums for user data.A ZFS developer’s analysis of the good and bad in Apple’s new APFS file system It also does not take advantage of byte- addressable non-volatile random-access memory. Unlike versions of HFS+ since Leopard, APFS has no support for hard links to directories. This is in line with many other modern file systems, but Time Machine still relies on them, so APFS is not yet an option for its backup volumes (as of macOS 10.15 Catalina).

NOR flash by Intel Reading from NOR flash is similar to reading from random-access memory, provided the address and data bus are mapped correctly. Because of this, most microprocessors can use NOR flash memory as execute in place (XIP) memory, meaning that programs stored in NOR flash can be executed directly from the NOR flash without needing to be copied into RAM first. NOR flash may be programmed in a random-access manner similar to reading. Programming changes bits from a logical one to a zero.

The main advantage of twistor is its ability to be assembled by automated machines, as opposed to core, which was almost entirely manual. AT&T; had great hopes for twistor, believing it would greatly reduce the cost of computer memory and put them in an industry leading position. Instead, DRAM memories came onto the market in the early 1970s that rapidly replaced all previous random access memory systems. Twistor ended up being used only in a few applications, many of them AT&T;'s own computers.

Rambus's technology was based on a very high speed, chip-to-chip interface that was incorporated on dynamic random-access-memory (DRAM) components, processors and controllers, which achieved performance rates over ten times faster than conventional DRAMs. Rambus's RDRAM transferred data at 600 MHz over a narrow byte-wide Rambus Channel to Rambus-compatible Integrated Circuits (ICs). Rambus's interface was an open standard, accessible to all semiconductor companies, such as Intel. Rambus provided companies who licensed its technology a full range of reference designs and engineering services.

Electronic memory that does not require refreshing is available, called static random-access memory (SRAM). SRAM circuits require more area on a chip, because an SRAM memory cell requires four to six transistors, compared to a single transistor and a capacitor for DRAM. As a result, data density is much lower in SRAM chips than in DRAM, and SRAM has higher price per bit. Therefore, DRAM is used for the main memory in computers, video game consoles, graphics cards and applications requiring large capacities and low cost.

The ferroelectric property exhibits polarization–electric-field-hysteresis loop, which is related to "memory". One application is integrating ferroelectric polymer Langmuir–Blodgett (LB) films with semiconductor technology to produce nonvolatile ferroelectric random-access memory and data-storage devices. Recent research with LB films and more conventional solvent formed films shows that the VDF copolymers (consisting of 70% vinylidene fluoride (VDF) and 30% trifluoroethylene (TrFE)) are promising materials for nonvolatile memory applications. The device is built in the form of the metal–ferroelectric–insulator–semiconductor (MFIS) capacitance memory.

When touching, the carbon nanotubes are held together by Van der Waals forces. Each NRAM "cell" consists of an interlinked network of CNTs located between two electrodes as illustrated in Figure 1. The CNT fabric is located between two metal electrodes, which is defined and etched by photolithography, and forms the NRAM cell. Carbon nanotube fabric The NRAM acts as a resistive non-volatile random access memory (RAM) and can be placed in two or more resistive modes depending on the resistive state of the CNT fabric.

Compressed audio files are supported by many modern CD players as well as DVD players. Disc players are capable of playing compressed formats, such as MP3, the most commonly used format, as well as Ogg Vorbis, the proprietary Windows Media Audio and ATRAC. Because of audio data compression, optical discs do not have to spin all of the time, potentially saving battery power; however, decompressing the audio takes more processor time. The audio is buffered in random-access memory, which also provides protection against skipping.

Harvard researchers have used the electrostatic attraction principle to design on/off switches for their proposed nanotube Random Access Memory devices. They used carbon nanotube bundles of ≈50 nm in diameter to fabricate their proof-of-concept prototypes. One set of MWNT bundles are laid on the substrate and another set of bundles is trenched on top of the underlying nanotube bundles with an air gap in between them. Once electrical bias is applied, the sets of nanotube bundles are attracted, thus changing the electrical resistance.

3D Cross Point 2 layer diagram 3D XPoint (pronounced three dee cross point) is a non-volatile memory (NVM) technology developed jointly by Intel and Micron Technology. It was announced in July 2015 and is available on the open market under brand names Optane (Intel) and subsequently QuantX (Micron) since April 2017. Bit storage is based on a change of bulk resistance, in conjunction with a stackable cross-gridded data access array. Initial prices are less than dynamic random-access memory (DRAM) but more than flash memory.

The Institute occupies more than on the Virginia Tech campus, including over of laboratory space, designed for flexibility and to house computing and laboratory facilities. The Institute occupies in Alexandria, Virginia, as part of Virginia Tech National Capital Region. The institute's infrastructure includes core facilities that integrate high-throughput data generation and data analysis capabilities. The Core Computational Facility has three data centers occupying over , with over 250 servers totalling over 10.5 terabytes of random access memory, distributed over more than 2650 processor cores.

Drake's Fortune, the first game in the series, was released for PlayStation 3 in November 2007. The system carried the following two installments of the main series, following a deal between Naughty Dog and Sony Computer Entertainment to exclusively release the franchise on Sony's systems. Among Thieves was published in 2009, and the creative team were afforded a greater license to utilize a larger amount of the system's random-access memory (RAM), due to an improved proprietary engine. It subsequently introduced more locales, higher free roam and combat abilities, and a larger map.

A 1996-2004 research project in the Computer Science Division of the University of California, Berkeley, the Berkeley IRAM project explored computer architecture enabled by the wide bandwidth between memory and processor made possible when both are designed on the same integrated circuit (chip).Project history. Retrieved 2011-03-30. Since it was envisioned that such a chip would consist primarily of random-access memory (RAM), with a smaller part needed for the central processing unit (CPU), the research team used the term "Intelligent RAM" (or IRAM) to describe a chip with this architecture.

The magnetic medium is found in magnetic tape, hard disk drives, floppy disks, and so on. This medium uses different patterns of magnetization in a magnetizable material to store data and is a form of non-volatile memory. Magnetic storage media can be classified as either sequential access memory or random access memory although in some cases the distinction is not perfectly clear. Small polarized ferrous cores in the shape of wires or poles are flipped along the surface of reading and writing into the desired data is stored.

Simtek Corporation was founded in 1987 in Colorado Springs, Colorado. The company sold a product called the NOVRAM (nonvolatile RAM) a Non-volatile random-access memory that combined a shadow-RAM (SRAM) with an EEPROM. It was designed to allow the SRAM to operate (at high SRAM speeds) for most of the time, but when it received a signal (usually sent by the system when a power failure was imminent) the entire contents of the SRAM were copied into the EEPROM at a very high speed thanks to the internal parallelism of the device.

Examples of these two categories of use for data efficiency (managerial and technical) can be found in process industries and computer chip research and development: 1.Traditional water/wastewater management procedures include travel to pump stations, reading and hand recording of meter numbers, transposition of log sheets, and other manual operations. This whole process can be said to have low data efficiency4. 2.In the design of today’s Dynamic Random Access Memory (DRAM) computer chips, R&D; optimizes parameters such as row and column access times, chip area usage, burst length and row granularity.

It became a widespread form of random-access memory, relying on an array of magnetized rings. By changing the sense of each ring's magnetization, data could be stored with one bit stored per ring. Since every ring had a combination of address wires to select and read or write it, access to any memory location in any sequence was possible. Magnetic core memory was the standard form of computer memory system until displaced by solid-state MOS (metal-oxide-silicon) semiconductor memory in integrated circuits (ICs) during the early 1970s.

The MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) was invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959. In addition to data processing, the MOSFET enabled the practical use of MOS transistors as memory cell storage elements, a function previously served by magnetic cores. Semiconductor memory, also known as MOS memory, was cheaper and consumed less power than magnetic-core memory. MOS random-access memory (RAM), in the form of static RAM (SRAM), was developed by John Schmidt at Fairchild Semiconductor in 1964.

Communication between the Emotion Engine and RAM occurs through two channels of DRDRAM (Direct Rambus Dynamic Random Access Memory) and the memory controller, which interfaces to the internal data bus. Each channel is 16 bits wide and operates at 400 MHz DDR (Double Data Rate). Combined, the two channels of DRDRAM have a maximum theoretical bandwidth of 25.6 Gbit/s (3.2 GB/s), about 33% more bandwidth than the internal data bus. Because of this, the memory controller buffers data sent from the DRDRAM channels so the extra bandwidth can be utilised by the CPU.

The MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) was invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959. In addition to data processing, the MOSFET enabled the practical use of MOS transistors as memory cell storage elements, a function previously served by magnetic cores. Semiconductor memory, also known as MOS memory, was cheaper and consumed less power than magnetic-core memory. MOS random-access memory (RAM), in the form of static RAM (SRAM), was developed by John Schmidt at Fairchild Semiconductor in 1964.

The one advantage that distinguishes it from other next generation non-volatile memory like magnetic random access memory (MRAM) is the unique scaling advantage of having better performance with smaller sizes. The limit to which phase-change memory can be scaled is hence limited by lithography at least until 45 nm. Thus, it offers the biggest potential of achieving ultra-high memory density cells that can be commercialized. Though phase-change memory offers much promise, there are still certain technical problems that need to be solved before it can reach ultra-high density and commercialized.

Monifa Louise Phillips is the first black woman to receive a Doctor of Philosophy (PhD) in physics from the University of Glasgow, which was founded in 1451. Phillips did her PhD within the Materials and Condensed Matter Physics group and defended her thesis entitled "Spectroscopic investigation of resistive switching mechanisms in pulsed laser deposited metal-oxide thin films". Her experimental research investigated the deposition and spectroscopic analysis of metal-oxide thin films for applications in Resistive random-access memory (RRAM), an emerging non-volatile memory storage technology. She was awarded her doctorate in 2019.

The UltraSPARC III has split primary instruction and data caches. The instruction cache has a capacity of 32 KB. The data cache has a capacity of 64 KB and is four-way set- associative with a 32-byte cache line. The external L2 cache has a maximum capacity of 8 MB. It is accessed via a dedicated 256-bit bus operating at up 200 MHz for a peak bandwidth of 6.4 GB/s. The cache is built synchronous static random access memory clocked at frequencies up to 200 MHz.

The emulator has 64 kB of functional random-access memory (RAM) which can be edited on the fly, and a functional 8-bit microprocessor based on the MOS Technology 6502; it also has functional and importable read-only memory (ROM). SethBling had the emulator run the original Atari 2600 read-only memory cartridges for the games Space Invaders, Pac-Man, and Donkey Kong. The ROM cartridge contains four kilobytes of data; each bit of RAM and ROM is represented by a Minecraft block. More than two thousand command blocks comprise the emulator's processor.

A new type of magnetic storage, called magnetoresistive random-access memory or MRAM, is being produced that stores data in magnetic bits based on the tunnel magnetoresistance (TMR) effect. Its advantage is non-volatility, low power usage, and good shock robustness. The 1st generation that was developed was produced by Everspin Technologies, and utilized field induced writing. The 2nd generation is being developed through two approaches: thermal-assisted switching (TAS) which is currently being developed by Crocus Technology, and spin-transfer torque (STT) on which Crocus, Hynix, IBM, and several other companies are working.

In what is often referred to as "Parkin's Periodic Table", Parkin showed that the strength of this oscillatory interlayer exchange interaction varied systematically across the Periodic Table of the elements. Parkin made numerous other fundamental discoveries which continued the development of the field of "spintronics" of which he is recognised as a prolific scientist. Later Parkin improved magnetic tunnelling junctions, a device invented in the 1970s by julliere, and revolutionized by Jagadeesh Moodera of MIT. This element can create a high performance magnetic random access memory in 1995.

The Xiaomi Mi 5 (Chinese:小米手机5) is a smartphone developed by the Chinese electronics manufacturer company Xiaomi for its high-end smartphone line, released in February 2016. The Xiaomi Mi 5 has a 5.15-inch 1080p screen, a Snapdragon 820 processor, a 3,000-mAh battery and a Sony Exmor IMX 16-megapixel camera. The standard version has 3GB of RAM (random-access memory) with 32GB of storage space (UFS2.0). The advanced version has the same amount of RAM with 64GB of storage space (UFS2.0).

NetApp FAS3240-R5 Modern NetApp FAS, AFF or ASA system consist of customized computers with Intel processors using PCI. Each FAS, AFF or ASA system has non-volatile random access memory, called NVRAM, in the form of a proprietary PCI NVRAM adapter or NVDIMM-based memory, to log all writes for performance and to play the data log forward in the event of an unplanned shutdown. One can link two storage systems together as a cluster, which NetApp (as of 2009) refers to using the less ambiguous term "Active/Active".

This made manual multiplication easier, as one needed to follow two parallel columns (instead of a vertical column and a horizontal row in the matrix notation.) It also sped up computer calculations, because both factors' elements were used in a similar order, which was more compatible with the sequential access memory in computers of those times — mostly magnetic tape memory and drum memory. Use of Cracovians in astronomy faded as computers with bigger random access memory came into general use. Any modern reference to them is in connection with their non-associative multiplication.

The Intel 8253 PIT was the original timing device used on IBM PC compatibles. It used a 1.193182 MHz clock signal (one third of the color burst frequency used by NTSC, one twelfth of the system clock crystal oscillator ) and contains three timers. Timer 0 is used by Microsoft Windows (uniprocessor) and Linux as a system timer, timer 1 was historically used for dynamic random access memory refreshes and timer 2 for the PC speaker. The LAPIC in newer Intel systems offers a higher-resolution (one microsecond) timer.

PCI softmodem (left) next to a conventional ISA hardware modem (right) A softmodem (software modem) is a modem with minimal hardware that uses software running on the host computer, and the computer's resources (especially the central processing unit, random access memory, and sometimes audio processing), in place of the hardware in a conventional modem. Softmodems are also sometimes called winmodems due to limited support for platforms other than Windows. By analogy, a linmodem is a softmodem that can run on Linux. Softmodems are sometimes used as an example of a hard real-time system.

All the machines in the series, except the //c, shared similar overall design elements. The plastic case was designed to look more like a home appliance than a piece of electronic equipment,Helmer, Carl, "An Apple to Byte," Byte, March 1978, p. 18-46. and the machine could be opened without the use of tools, allowing access to the computer's internals. An Apple IIc with monitor The motherboard held eight expansion slots and an array of random access memory (RAM) sockets that could hold up to 48 kilobytes.

The phase-amplitude converter creates the sample-domain waveform from the truncated phase output word received from the PA. The PAC can be a simple read only memory containing 2M contiguous samples of the desired output waveform which typically is a sinusoid. Often though, various tricks are employed to reduce the amount of memory required. This include various trigonometric expansions, trigonometric approximations and methods which take advantage of the quadrature symmetry exhibited by sinusoids. Alternatively, the PAC may consist of random access memory which can be filled as desired to create an arbitrary waveform generator.

Thus, the entire stack of snapshots is virtually a single coherent disk; in that sense, creating snapshots works similarly to the incremental backup technique. Other components of a virtual machine can also be included in a snapshot, such as the contents of its random-access memory (RAM), BIOS settings, or its configuration settings. "Save state" feature in video game console emulators is an example of such snapshots. Restoring a snapshot consists of discarding or disregarding all overlay layers that are added after that snapshot, and directing all new changes to a new overlay.

Delay line memory is a form of computer memory, now obsolete, that was used on some of the earliest digital computers. Like many modern forms of electronic computer memory, delay line memory was a refreshable memory, but as opposed to modern random-access memory, delay line memory was sequential-access. Analog delay line technology had been used since the 1920s to delay the propagation of analog signals. When a delay line is used as a memory device, an amplifier and a pulse shaper are connected between the output of the delay line and the input.

ReadyBoost (codenamed EMD) is a disk caching software component developed by Microsoft for Windows Vista and included in later versions of the Windows operating system. ReadyBoost enables NAND memory mass storage devices, including CompactFlash, SD cards, and USB flash drives, to be used as a cache between a hard drive and random access memory in an effort to increase computing performance. ReadyBoost relies on the SuperFetch technology and, like SuperFetch, adjusts its cache based on user activity. Other features, including ReadyDrive, are implemented in a manner similar to ReadyBoost.

The only current technology that offered a clear latency benefit over racetrack memory was SRAM, on the order of 0.2 ns, but at a higher cost. larger feature size "F" of about 45 nm (as of 2011) with a cell area of about 140 F2. Racetrack memory is one among several emerging technologies that aim to replace conventional memories such as DRAM and Flash, and potentially offer a universal memory device applicable to a wide variety of roles. Other contenders included magnetoresistive random-access memory (MRAM), phase-change memory (PCRAM) and ferroelectric RAM (FeRAM).

The Dismac D8000 was the first personal computer manufactured in Brazil, and in 1980 it was the first Brazilian clone of TRS-80 Model I computer. It used a 2 MHz Zilog Z80A microprocessor, with 16Kb of random access memory and 16Kb of read-only memory. The video output was through a PAL-M television with 16×32/64 within text mode and 48×128 points within the graphic mode. The keyboard contained 51 keys and was stored in the same case as the cassette recorder and the processor unit.

Schooner's appliances were originally built on the IBM System x server with Nehalem dual four-core processors from Intel Corporation, 64 GB of dynamic random access memory, 512 GB of Intel X25-E solid-state drives, four Gigabit Ethernet ports and in a 2 rack unit appliance, with the ability to expand. By early 2011, the tie to IBM hardware ended. Instead, the product was sold as software that could run on other brands of computers. In April 2011, Schooner announced support for using cluster computing with the InnoDB technology.

To continue miniaturization of microelectronics, new materials are needed as dimensions change. There are three main applications for thin ruthenium films in microelectronics. The first is using thin films of ruthenium as electrodes on both sides of tantalum pentoxide (Ta2O5) or barium strontium titanate ((Ba, Sr)TiO3, also known as BST) in the next generation of three-dimensional dynamic random access memories (DRAMs). Ruthenium thin-film electrodes could also be deposited on top of lead zirconate titanate (Pb(ZrxTi1−x)O3, also known as PZT) in another kind of RAM, ferroelectric random access memory (FRAM).

The 21064 has two on-die primary caches: an 8 KB data cache (known as the D-cache) using a write- through write policy and an 8 KB instruction cache (known as the I-cache). Both caches are direct-mapped for single-cycle access and have 32-byte line size. The caches are built with six-transistor static random access memory (SRAM) cells that have an area of 98 μm2. The caches are 1,024 cells wide by 66 cells tall, with the top two rows used for redundancy.

He is responsible for relating the properties of long-term memory to mathematical properties of high-dimensional spaces and compares artificial neural-net associative memory to conventional computer random-access memory and to the neurons in the brain. This theory has been applied to design and implement the Random indexing approach to learning semantic relations from linguistic data.Kanerva, Pentti, Kristoferson, Jan and Holst, Anders (2000): Random Indexing of Text Samples for Latent Semantic Analysis, Proceedings of the 22nd Annual Conference of the Cognitive Science Society, p. 1036\. Mahwah, New Jersey: Erlbaum, 2000.

The Intel 8088 processor used in the original IBM PC had 20 address lines and so could directly address 1 MiB (220 bytes) of memory. Different areas of this address space were allocated to different kinds of memory used for different purposes. Starting at the lowest end of the address space, the PC had read/write random access memory (RAM) installed, which was used by DOS and application programs. The first part of this memory was installed on the motherboard of the system (in very early machines, 64 KiB, later revised to 256 KiB).

Illustration of difference between row- and column-major ordering In computing, row-major order and column-major order are methods for storing multidimensional arrays in linear storage such as random access memory. The difference between the orders lies in which elements of an array are contiguous in memory. In row-major order, the consecutive elements of a row reside next to each other, whereas the same holds true for consecutive elements of a column in column-major order. While the terms allude to the rows and columns of a two-dimensional array, i.e.

The ROM/RAM chip (DC327) implemented one-fifth of the patchable control store. It contained a 16,384 by 8-bit (16 KB) read-only memory (ROM), a 1,024 by 8-bit (1 KB) random-access memory RAM and a 32 by 14-bit content-addressable memory (CAM). The ROM contained the control store, with the RAM used to hold control store patches. The ROM/RAM consisted of 208,000 transistors on a die measuring 344 mils by 285 mils (8.74 mm by 7.24 mm) for an area of 98,040 mil2 (63.25 mm2).

These two states of resistance are on and off states. Using this approach, more than 10 times the difference between off and on state resistances has been achieved. Furthermore, this idea can be used to create very highly packed arrays of nanoswitches and random access memory devices, if they can be applied to arrays of single-walled carbon nanotubes, which are about 1 nm in diameter and hundreds of micrometres in length. The current technical challenge with this design is the lack of control to place arrays of carbon nanotubes on substrate.

The RAMDAC, or random-access-memory digital- to-analog converter, converts digital signals to analog signals for use by a computer display that uses analog inputs such as cathode ray tube (CRT) displays. The RAMDAC is a kind of RAM chip that regulates the functioning of the graphics card. Depending on the number of bits used and the RAMDAC-data- transfer rate, the converter will be able to support different computer- display refresh rates. With CRT displays, it is best to work over 75 Hz and never under 60 Hz, to minimize flicker.

MBasic 5.21 running on a Z80 CP/M system displayed on a monochrome monitor typical for that time. MBASIC version 5 required a CP/M system with at least 28 kB of random access memory (RAM) and at least one diskette drive. Unlike versions of Microsoft BASIC-80 that were customized by home computer manufacturers to use the particular hardware features of the computer, MBASIC relied only on the CP/M operating system calls for all input and output. Only the CP/M console (screen and keyboard), line printer, and disk devices were available.

The smartphone is shipped with the Android 2.1 "Eclair" operating system. It features a 3.7-inch AMOLED capacitive touchscreen with WVGA resolution, 5-megapixel camera capable with automatic geotagging supported by the integrated Assisted GPS antenna and digital compass. The device is upgradable and powered by a Qualm Snapdragon 1 gigahertz processor and 512 megabytes random access memory. It also has 512 megabytes of read-only memory alongside its 2 gigabytes internal memory backed up with a microSD card slot capable of offering up to 32 gigabytes of expandable storage memory with 8 gigabytes included respectively.

In the film, Chitti often introduces himself by stating the clock rate of his central processing unit, which is 1 terahertz (1012 hertz), and his random- access memory limit, which is 1 zettabyte (1021 bytes). This introduction dialogue, which is spoken by Chitti as "Hi, I'm Chitti, speed 1 terahertz, memory 1 zettabyte" became popular. Rajinikanth featured in a cameo role as Chitti in the science-fiction film Ra.One (2011). On Rajinikanth's 64th birthday, an agency named Minimal Kollywood Posters designed posters of Rajinikanth's films, in which the Minion characters from the Despicable Me franchise are dressed as Rajinikanth.

A redundant array of independent memory (RAIM) is a design feature found in certain computers' main random access memory. RAIM utilizes additional memory modules and striping algorithms to protect against the failure of any particular module and keep the memory system operating continuously. RAIM is similar in concept to a redundant array of independent disks (RAID), which protects against the failure of a disk drive, but in the case of memory it supports several DRAM device chipkills and entire memory channel failures. RAIM is much more robust than parity checking and ECC memory technologies which cannot protect against many varieties of memory failures.

SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data. MOS technology is the basis for DRAM (dynamic random-access memory). In 1966, Dr. Robert H. Dennard at the IBM Thomas J. Watson Research Center was working on MOS memory. While examining the characteristics of MOS technology, he found it was capable of building capacitors, and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, while the MOS transistor could control writing the charge to the capacitor.

Z-RAM is a tradename of a now-obsolete dynamic random-access memory technology that did not require a capacitor to maintain its state. Z-RAM was developed between 2002 and 2010 by a now-defunct company named Innovative Silicon. Z-RAM relies on the floating body effect, an artifact of the silicon on insulator (SOI) process which places transistors in isolated tubs (the transistor body voltages "float" with respect to the wafer substrate beneath the tubs). The floating body effect causes a variable capacitance to appear between the bottom of the tub and the underlying substrate.

Laurie Spiegel implemented a simple paint program at Bell Labs to allow users to "paint" directly on the framebuffer. The development of MOS memory (metal–oxide–semiconductor memory) integrated-circuit chips, particularly high-density DRAM (dynamic random- access memory) chips with at least 1kb memory, made it practical to create a digital memory system with framebuffers capable of holding a standard definition (SD) video image. This led to the development of the SuperPaint system by Richard Shoup at Xerox PARC during 1972–1973. It used a framebuffer displaying 640×480 pixels (standard NTSC video resolution) with eight-bit depth (256 colors).

Rambus DRAM (RDRAM), and its successors Concurrent Rambus DRAM (CRDRAM) and Direct Rambus DRAM (DRDRAM), are types of synchronous dynamic random-access memory (SDRAM) developed by Rambus from the 1990s through to the early-2000s. The third-generation of Rambus DRAM, DRDRAM was replaced by XDR DRAM. Rambus DRAM was developed for high-bandwidth applications, and was positioned by Rambus as replacement for various types of contemporary memories, such as SDRAM. DRDRAM was initially expected to become the standard in PC memory, especially after Intel agreed to license the Rambus technology for use with its future chipsets.

She is talkative and sometimes rowdy. Her name is based on Random-access memory (RAM) and her portable video game counterpart is also the Nintendo DS. She transforms into White Sister as well, with light blue eyes and sporting pink hair in an asymmetrical bob with the left side being longer, and the same uniform as her sister but mirror imaged. ; White Sister : : Also debuting in Mk2, she is the older of Blanc's younger twin sisters. She has short brown hair, blue eyes, and dresses mainly in a light blue and white winter coat and hat with a pink bowtie and purse.

To date, the only such system to enter widespread production is ferroelectric RAM, or F-RAM (sometimes referred to as FeRAM). F-RAM is a random-access memory similar in construction to DRAM but (instead of a dielectric layer like in DRAM) contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O3], commonly referred to as PZT. The Zr/Ti atoms in the PZT change polarity in an electric field, thereby producing a binary switch. Unlike RAM devices, F-RAM retains its data memory when power is shut off or interrupted, due to the PZT crystal maintaining polarity.

In computing, interleaved memory is a design which compensates for the relatively slow speed of dynamic random-access memory (DRAM) or core memory, by spreading memory addresses evenly across memory banks. That way, contiguous memory reads and writes use each memory bank in turn, resulting in higher memory throughput due to reduced waiting for memory banks to become ready for the operations. It is different from multi-channel memory architectures, primarily as interleaved memory does not add more channels between the main memory and the memory controller. However, channel interleaving is also possible, for example in freescale i.

Mac OS X booting up in single-user mode In PowerPC-based Macintoshes, the boot process starts with the activation of BootROM, the basic Macintosh ROM, which performs a Power On Self Test to test hardware essential to startup. On the passing of this test, the startup chime is played and control of the computer is passed to OpenFirmware. OpenFirmware initializes the Random Access Memory, Memory Management Unit and hardware necessary for the ROM's operation. The OpenFirmware then checks settings, stored in NVRAM, and builds a list of all devices on a device tree by gathering their stored FCode information.

DVD-RAM (DVD Random Access Memory) is a DVD-based disc specification presented in 1996 by the DVD Forum, which specifies rewritable DVD-RAM media and the appropriate DVD writers. DVD-RAM media have been used in computers as well as camcorders and personal video recorders since 1998. In May 2019, Panasonic, the only remaining manufacturer of DVD-RAM discs, announced that it would end production of DVD-RAM media by the end of that month, citing shrinking demand as the primary motivation. Panasonic made its discs under its own brand name and also under the Verbatim brand.

The Write Anywhere File Layout (WAFL) is a proprietary file system that supports large, high-performance RAID arrays, quick restarts without lengthy consistency checks in the event of a crash or power failure, and growing the filesystems size quickly. It was designed by NetApp for use in its storage appliances like NetApp FAS, AFF, Cloud Volumes ONTAP and ONTAP Select. Its author claims that WAFL is not a file system, although it includes one. It tracks changes similarly to journaling file systems as logs (known as NVLOGs) in dedicated memory storage device non-volatile random access memory, referred to as NVRAM or NVMEM.

At the same time, CD-ROM developers could ship the KMP with content to support existing Windows and Macintosh systems. As part of the new focus, the company was downsized, with layoffs representing about 20 to 25% of the workforce.Ray Valdés, "What's up at Kaleida?", Dr. Dobbs Developer Update, September 1, 1994 In late 1993 and early 1994, the company’s objective was for the Kaleida Media Player to run on a reference platform consisting of either a 25 MHz Motorola 68030 or a 25 MHz Intel 80486 processor running with 4 MB of random access memory.

FJG diagrams FJG RAM, short for Floating Junction Gate Random Access Memory, is a type of computer memory invented by Oriental Semiconductor Co., Ltd. The FJG RAM has an ultra-compact cell area of 4F2 (F refers to feature size) and a capacitorless cell configuration. It is made without exotic process steps, materials or new process tools, and the process for making the device is available from all existing DRAM fabs. Due to the absence of a capacitor, the FJG cell process is more compatible with logic processes, allowing its use not only in standalone DRAM applications but also in embedded-DRAM applications.

The company sold hardware and software products such as local area networks, disk drives, printers, personal computers, random access memory chips, central processing units and integrated circuit boards. The principal vendors of the company included Seagate Technology, Hewlett-Packard, Microsoft, IBM, Sun and Creative Labs, 3Com, Microsoft, Epson, and Intel. It was a leading international distributor of microcomputers, peripherals, and software to more than 130,000 resellers in 46 countries in Europe, Latin America, Asia, the Middle East and Africa, until its bankruptcy due to an investigation of tax fraud. The companies customers include assemblers of non branded component products and resellers.

Some cartridges had battery-backed static random-access memory, allowing a user to save data such as game progress or scores between uses. ROM cartridges allowed the user to rapidly load and access programs and data without the expense of a floppy drive, which was an expensive peripheral during the home computer era, and without using slow, sequential, and often unreliable Compact Cassette tape. An advantage for the manufacturer was the relative security of the software in cartridge form, which was difficult for end users to replicate. However, cartridges were expensive to manufacture compared to making a floppy disk or CD-ROM.

Fast Cycle DRAM (FCRAM) is a type of synchronous dynamic random-access memory developed by Fujitsu and Toshiba. FCRAM has a shorter data access latency compared to contemporary commodity SDRAMs; and is used in where the lower data access latency is more desirable than low cost and high capacity (FCRAM is a moderate cost and capacity speciality DRAM). FCRAM achieves its low latency by dividing each row into multiple sub-rows, of which only one is activated during a row-activation operation. This had the effect of reducing the effective array size, improving the access time.

In 2005, a benchmark with 20 million processes was successfully performed with 64-bit Erlang on a machine with 16 GB random-access memory (RAM; total 800 bytes/process). Erlang has supported symmetric multiprocessing since release R11B of May 2006. While threads need external library support in most languages, Erlang provides language-level features to create and manage processes with the goal of simplifying concurrent programming. Though all concurrency is explicit in Erlang, processes communicate using message passing instead of shared variables, which removes the need for explicit locks (a locking scheme is still used internally by the VM).

In addition, 32-bit code executes faster and requires less storage space (which is at a premium on the Nintendo 64's cartridges). In terms of its random-access memory (RAM), the Nintendo 64 is one of the first modern consoles to implement a unified memory subsystem, instead of having separate banks of memory for CPU, audio, and video, for example. The memory itself consists of 4 megabytes of Rambus RDRAM, expandable to 8 MB with the Expansion Pak. Rambus was quite new at the time and offered Nintendo a way to provide a large amount of bandwidth for a relatively low cost.

Noh performs research in condensed matter physics. His research has focused on transition metal oxides but has extended to other strongly correlated electron systems. His research interests include the growth of oxide thin films and artificial heterostructures, emerging phenomena in oxide surfaces and interfaces, the metal-insulator transition and orbital physics in transition metal oxides, the optical properties of numerous solids, and the physics of oxide devices such as ferroelectric random access memory (FeRAM), resistance RAM (RRAM), and spintronic devices. He has worked on novel nanoscale physical phenomena, especially in informational devices such as FeRAMs and RRAMs.

RAM parity checking is the storing of a redundant parity bit representing the parity (odd or even) of a small amount of computer data (typically one byte) stored in random access memory, and the subsequent comparison of the stored and the computed parity to detect whether a data error has occurred. The parity bit was originally stored in additional individual memory chips; with the introduction of plug-in DIMM, SIMM, etc. modules, they became available in non-parity and parity (with an extra bit per byte, storing 9 bits for every 8 bits of actual data) versions.

BLU Acceleration is the second generation of the technology that originated in the Blink project, which was started at the IBM Almaden Research Center in 2006. Aimed primarily at "read-mostly" business intelligence (BI) query processing, Blink combined the scale-out of multi-core processors with dynamic random-access memory (DRAM) to store a copy of a data mart completely in memory. It also used proprietary compression techniques and algorithms that allowed most SQL queries to be performed directly against compressed data (as opposed to requiring data to be decompressed before processing could take place).Lightstone, Lohman, Schiefer.

Three Philips MAB8440 microcontrollers and EEPROM (right, with paper tag) The deck's control functions are spread between three identical Philips MAB8440 microcontrollers, clocked with a common crystal. Each microcontroller carries of program memory and 128Bytes of random-access memory. The first microcontroller polls faceplate keyboard, infrared remote control port, and an optically decoupled RS-232 port; the second one controls the motors and calculates real-time tape counter values. The third microcontroller manages digital-to-analog converters, CMOS switches, multiplexers and recording level meter; it executes the tape calibration program and stores current settings in non-volatile memory.

IBM produces and sells computer hardware, middleware and software, and provides hosting and consulting services in areas ranging from mainframe computers to nanotechnology. IBM is also a major research organization, holding the record for most U.S. patents generated by a business () for 26 consecutive years. Inventions by IBM include the automated teller machine (ATM), the floppy disk, the hard disk drive, the magnetic stripe card, the relational database, the SQL programming language, the UPC barcode, and dynamic random-access memory (DRAM). The IBM mainframe, exemplified by the System/360, was the dominant computing platform during the 1960s and 1970s.

The latest development of the system. This unit has double-board design. The device is developed using the 8-bit AVR microcontroller ATMega644, with 64kB memory (ROM), 4kB random access memory (RAM), and operates at a clock frequency of 20 MHz. It includes analog and digital inputs, separate chip for preprocessing signal from the knock sensor (KS) (except SECU-3 'Lite' and 'Micro' units), a signal conditioner for VR start-pulse sensor (except SECU-3 Micro unit), a signal conditioner for the VR crankshaft position sensor (CKP), the interface with a computer, and the outputs for actuators control.

In 1987, United States International Trade Commission order that the Samsung Group of South Korea unlawfully sold computer chips in the United States without licenses from the chip inventor, Texas Instruments Inc. The order requires Samsung to pay a penalty to Texas Instruments within the coming weeks. Otherwise, sales of all dynamic random access memory chips made by Samsung and all products using the chips would be banned in the United States. The ban includes circuit boards and equipment called single-in-line packages made by other companies that use D-RAM's made by Samsung with 64,000 or 256,000 characters of memory.

The term continuous memory was coined by Hewlett-Packard (HP) to describe a unique feature of certain HP calculators whereby the calculator could internally sustain most, or in later models - all, of the contents of user memory (via battery-backed CMOS memory). Since its introduction on the HP-25C, this feature slowly evolved by model to eventually mean maintaining the contents of nearly all calculator memory, including system and scratch RAM, options, settings, flags, and other calculator state information. Before the introduction of the HP-25C in 1976, all calculator random-access memory (RAM) was volatile, i.e. its contents (esp.

In October 2005, the Korean company Samsung pleaded guilty to conspiring with other companies, including Infineon and Hynix Semiconductor, to fix the price of dynamic random access memory (DRAM) chips. Samsung was the third company to be charged in connection with the international cartel and was fined $300 million, the second largest antitrust penalty in US history. In October 2004, four executives from Infineon, a German chip maker, received reduced sentences of 4 to 6 months in federal prison and $250,000 in fines after agreeing to aid the U.S. Department of Justice with their ongoing investigation of the conspiracy.

System 6's Apple menu cannot be used to launch applications. The current application icon in the upper right- hand corner of the menu bar cycles between open applications; it is not a menu. System 6 supports 24 bits of addressable RAM (random access memory), which allows a maximum of 8 megabytes of RAM with no provision for virtual memory. These limitations were fixed in System 7. The version of the HFS file system in System 6 also has a volume size limit; it supports up to 2 gigabytes (GB) and 65,536 files on a volume.

In 1966 he invented dynamic random-access memory (DRAM), for which a patent was issued in 1968. Dennard was also among the first to recognize the tremendous potential of downsizing MOSFETs. The scaling theory he and his colleagues formulated in 1974 postulated that MOSFETs continue to function as voltage- controlled switches while all key figures of merit such as layout density, operating speed, and energy efficiency improve – provided geometric dimensions, voltages, and doping concentrations are consistently scaled to maintain the same electric field. This property underlies the achievement of Moore's Law and the evolution of microelectronics over the last few decades.

There is some disagreement as to the boundary between data at rest and data in use. Data at rest generally refers to data stored in persistent storage (disk, tape) while data in use generally refers to data being processed by a computer central processing unit (CPU) or in random access memory (RAM, also referred to as main memory or simply memory). Definitions include: > "...all data in computer storage while excluding data that is traversing a > network or temporarily residing in computer memory to be read or updated." Figure 2: Data at Rest vs Data in Use.

On February 9, 2016, the FBI announced that it was unable to unlock one of the mobile phones they had recovered from Farook and Malik's home because of the phone's advanced security features. The phone was an iPhone 5C owned by the county and issued to Farook during his employment with them. When asked by the FBI to create a new version of the phone's iOS operating system that could be installed and run in the phone's random access memory to disable certain security features, Apple Inc. declined due to its policy to never undermine the security features of its products.

In August 2011, AMD expanded the Radeon name to include random access memory modules under the AMD Memory line. The initial releases included 3 types of 2GiB DDR3 SDRAM modules: Entertainment (1333 MHz, CL9 9-9), UltraPro Gaming (1600 MHz, CL11 11-11) and Enterprise (specs to be determined). In 2013-05-08, AMD announced the release of Radeon RG2133 Gamer Series Memory.AMD Announces Memory Series Designed with Gamers in Mind – AMD Radeon RG2133 and upgraded AMD Radeon RAMDisk deliver lightning fast memory performance for PC gaming - Radeon R9 2400 Gamer Series Memory was released in 2014-01-16.

Inventions by IBM include the floppy disk, the hard disk drive, the magnetic stripe card, the relational database, the SQL programming language, the UPC barcode, and dynamic random-access memory (DRAM). The IBM mainframe, exemplified by the System/360, was the dominant computing platform during the 1960s and 1970s. IBM, sometimes referred to as Big Blue, is one of 30 companies included in the Dow Jones Industrial Average and one of the world's largest employers, with over 352,600 employees . At least 70% of IBM employees, known as "IBMers", are based outside the United States, with the largest number in India.

At its founding, Intel was distinguished by its ability to make logic circuits using semiconductor devices. The founders' goal was the semiconductor memory market, widely predicted to replace magnetic-core memory. Its first product, a quick entry into the small, high-speed memory market in 1969, was the 3101 Schottky TTL bipolar 64-bit static random-access memory (SRAM), which was nearly twice as fast as earlier Schottky diode implementations by Fairchild and the Electrotechnical Laboratory in Tsukuba, Japan.1969 – Schottky-Barrier Diode Doubles the Speed of TTL Memory & Logic Computer History Museum. Retrieved September 23, 2011.

When a computer is turned off, its softwareincluding operating systems, application code, and dataremains stored on non-volatile memory. When the computer is powered on, it typically does not have an operating system or its loader in random-access memory (RAM). The computer first executes a relatively small program stored in read-only memory (ROM) along with a small amount of needed data, to access the nonvolatile device or devices from which the operating system programs and data can be loaded into RAM. The small program that starts this sequence is known as a bootstrap loader, bootstrap or boot loader.

In 1966, Dr. Robert H. Dennard at the IBM Thomas J. Watson Research Center was working on MOS memory. While examining the characteristics of MOS technology, he found it was capable of building capacitors, and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, while the MOS transistor could control writing the charge to the capacitor. This led to his development of a single- transistor DRAM memory cell. In 1967, Dennard filed a patent under IBM for a single-transistor DRAM (dynamic random-access memory) memory cell, based on MOS technology.

Integration of Si/SiGe RITDs with Si CMOS has been demonstrated.S. Sudirgo, D.J. Pawlik, S.K. Kurinec, P.E. Thompson, J.W. Daulton, S.Y. Park, R. Yu, P.R. Berger, and S.L. Rommel, NMOS/SiGe Resonant Interband Tunneling Diode Static Random Access Memory, 64th Device Research Conference Conference Digest, page 265, June 26–28, 2006, The Pennsylvania State University, University Park, PA. Vertical integration of Si/SiGe RITD and SiGe heterojunction bipolar transistors was also demonstrated, realizing a 3-terminal negative differential resistance circuit element with adjustable peak-to-valley current ratio. These results indicate that Si/SiGe RITDs is a promising candidate of being integrated with the Si integrated circuit technology.

Operating system virtualization is the process of simulating the operation of a computer within another computer. This technique is useful for someone who wants to run more than one type of operating system on his/her PC concurrently. Shadow page tables are often used in simulating more than one operating system on a single set of memory and processor. A page table is used by an operating system to map the virtual memory, the actual memory used by programs and the operating system to store information, to its location on the physical memory, the hardware-specific memory stored in bytes on the RAM (Random Access Memory).

Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog acceleration. An ECRAM cell is a three-terminal device composed of a conductive channel, an insulating electrolyte, an ionic reservoir, and metal contacts. The resistance of the channel is modulated by ionic exchange at the interface between the channel and the electrolyte upon application of an electric field. The charge-transfer process allows both for state retention in the absence of applied power, and for programming of multiple distinct levels, both differentiating ECRAM operation from the one of a field-effect transistor (FET).

There are two main adult of semiconductor memory, send and sent all access to . Examples of non-volatile memory are flash memory (used as first storage) and ROM, PROM, EPROM and EEPROM memory (used for storing firmware such as BIOS). Examples of volatile memory are primary storage, which is typically my dynamic access memory (DRAM), and fast CPU send all data to memory, which is typically static random-access memory (Samsung ) that is fast but energy-consuming, offering high speed up memory areal density than DRAM. Most semiconductor memory is organized into memory cells or bistable to scan each storing fifty bit (1000 or 2000).

Certain browsers flag sites that have been reported to Google and that have been confirmed as hosting malware by Google. There are two common methods that an antivirus software application uses to detect viruses, as described in the antivirus software article. The first, and by far the most common method of virus detection is using a list of virus signature definitions. This works by examining the content of the computer's memory (its Random Access Memory (RAM), and boot sectors) and the files stored on fixed or removable drives (hard drives, floppy drives, or USB flash drives), and comparing those files against a database of known virus "signatures".

The Parallax's SX series microcontrollers are 8-bit RISC microcontrollers (using a 12-bit instruction word) which have an unusually high speed, up to 75 MHz (75 MIPS), and a high degree of flexibility. They include up to 4096 12-bit words of Flash memory and up to 262 bytes of random-access memory (RAM), an eight bit counter and other support logic. They are especially geared toward the emulation of I/O hardware in software, which makes them very flexible. While Parallax's SX micros are limited in variety, their high speed and additional resources allow programmers to create 'virtual devices', including complete video controllers, as required.

This traditional division of storage to primary, secondary, tertiary and off-line storage is also guided by cost per bit. In contemporary usage, "memory" is usually semiconductor storage read- write random-access memory, typically DRAM (dynamic RAM) or other forms of fast but temporary storage. "Storage" consists of storage devices and their media not directly accessible by the CPU (secondary or tertiary storage), typically hard disk drives, optical disc drives, and other devices slower than RAM but non-volatile (retaining contents when powered down).Storage as defined in Microsoft Computing Dictionary, 4th Ed. (c)1999 or in The Authoritative Dictionary of IEEE Standard Terms, 7th Ed., (c) 2000.

Initially, inXile had an agreement to develop an open-world project for PlayStation 3 in Unreal Engine, but they didn't know the specifications at the time, which led to performance issues related to random-access memory on the console. With Scott Crisostomo as a lead designer, Heist was inspired by the 60s movies for the visual style, and several action movies for the overall feel, like Bullitt, Point Break and Dog Day Afternoon. The intent was to use the 60s rock and roll songs for the soundtrack. The developers used Need for Speed: Most Wanted as a reference for the car chases found in-game.

Simula introduced important concepts that are today an essential part of object-oriented programming, such as class and object, inheritance, and dynamic binding. Simula was also designed to take account of programming and data security. For programming security purposes a detection process was implemented so that through reference counts a last resort garbage collector deleted unused objects in the random-access memory (RAM). But although the idea of data objects had already been established by 1965, data encapsulation through levels of scope for variables, such as private (-) and public (+), were not implemented in Simula because it would have required the accessing procedures to be also hidden.

Microsoft Windows XP Professional x64 Edition, released on April 25, 2005, is an edition of Windows XP for x86-64 personal computers. It is designed to use the expanded 64-bit memory address space provided by the x86-64 architecture. The primary benefit of moving to 64-bit is the increase in the maximum allocatable random-access memory (RAM). 32-bit editions of Windows XP are limited to a total of 4 gigabytes. Although the theoretical memory limit of a 64-bit computer is about 16 exabytes (17.1 billion gigabytes), Windows XP x64 is limited to 128GB of physical memory and 16 terabytes of virtual memory.

Puppy Linux is an operating system and family of light-weight Linux distributions that focus on ease of use and minimal memory footprint. The entire system can be run from random-access memory with current versions generally taking up about 600 MB (64-bit), 300 MB (32-bit), allowing the boot medium to be removed after the operating system has started. Applications such as AbiWord, Gnumeric and MPlayer are included, along with a choice of lightweight web browsers and a utility for downloading other packages. The distribution was originally developed by Barry Kauler and other members of the community, until Kauler retired in 2013.

Rowen worked first as a summer intern in 1977, then as a new college graduate for Intel Corporation, starting in 1978, specifically on random access memory products. He returned to studies in 1980, while continuing to work part-time at Intel's Santa Cruz facilities, where he met his wife, Anne Baker. His research work reduced instruction set computers, called the Stanford MIPS project, along with advisor John L. Hennessy, and fellow students, Thomas Gross, Steve Przybylski, Norman Jouppi and others, eventually led to the founding of MIPS in 1984. At MIPS he worked on the MIPS instruction set, design tools, and verification of the MIPS R2000 and R3000 processors.

The MS430 memory module has capacities of 32, 64, 128, 256 and 512 MB of memory. The memory is organised into four banks, each 280 bits wide, of which 256 bits are used to store data and 24 bits are used to store error detection and correction (EDC) information. The memory is protected by EDC logic, which is capable of detecting and correcting 1-bit errors and common 2-, 3- and 4-bit errors. The memory is implemented using 280 surface mounted dual in-line package (DIP) 4-bit dynamic random access memory (DRAM) chips with capacities of 1, 4 and 16 Mb that reside on both sides of the module.

It boots from FreeBSD as a stand-alone kernel-space module and uses some functions of FreeBSD (command interpreter and drivers stack, for example). All NetApp ONTAP-based hardware appliances have battery-backed non-volatile random access memory or NVDIMM, referred to as NVRAM or NVDIMM, which allows them to commit writes to stable storage more quickly than traditional systems with only volatile memory. Early storage systems connected to external disk enclosures via parallel SCSI, while modern models () use fibre channel and SAS (Serial Attach SCSI) SCSI transport protocols. The disk enclosures (shelves) use fibre channel hard disk drives, as well as parallel ATA, serial ATA and Serial attached SCSI.

In certain cases, a cold boot attack is used in the discipline of digital forensics to forensically preserve data contained within memory as criminal evidence. For example, when it is not practical to preserve data in memory through other means, a cold boot attack may be used to perform a dump of the data contained in random access memory. For example, a cold boot attack is used in situations where a system is secured and it is not possible to access the computer. A cold boot attack may also be necessary when a hard disk is encrypted with full disk encryption and the disk potentially contains evidence of criminal activity.

Encrypting random access memory (RAM) mitigates the possibility of an attacker being able to obtain encryption keys or other material from memory via a cold boot attack. This approach may require changes to the operating system, applications, or hardware. One example of hardware- based memory encryption was implemented in the Microsoft Xbox.B. Huang "Keeping Secrets in Hardware: The Microsoft Xbox Case Study", "CHES 2002 Lecture Notes in Notes in Computer Science Volume 2523", 2003 Software-based full memory encryption is similar to CPU-based key storage since key material is never exposed to memory, but is more comprehensive since all memory contents are encrypted.

The IdeaPad S10 was Lenovo's first netbook. While Engadget found the design unremarkable, the low starting price was well-received. The S10 featured a TFT active matrix 1024×576 or 1024×600 display with an 80 or 160 GB hard disk drive and 512 MB or 1 GB DDR2 Random Access Memory, both of which could be upgraded via a trap door on the bottom of the netbook. The initial S10 featured 512 MB of RAM soldered to system board with an expansion SO-DIMM slot for further upgrades to 2 or 2.5 GB (2.5 GB was only usable with an operating system with support for sparse memory regions).

In some cases, such as with tmpfs, the computer's main memory (random-access memory, RAM) is used to create a temporary file system for short-term use. Some file systems are used on local data storage devices; others provide file access via a network protocol (for example, NFS, SMB, or 9P clients). Some file systems are "virtual", meaning that the supplied "files" (called virtual files) are computed on request (such as procfs and sysfs) or are merely a mapping into a different file system used as a backing store. The file system manages access to both the content of files and the metadata about those files.

In addition to its ability to make and receive cellular phone calls, Simon was also able to send and receive faxes, e-mails and cellular pages. Simon featured many applications, including an address book, calendar, appointment scheduler, calculator, world time clock, electronic notepad, handwritten annotations, and standard and predictive stylus input screen keyboards. It features a liquid-crystal display (LCD) and has PC Card support. Its internal hardware includes the Vadem VG230 (CMOS) system-on-a-chip (SoC) from NEC, MOS random-access memory (RAM) chips from Sony and Hitachi, flash memory (floating-gate MOS) chips from Intel and Hitachi, and Cirrus Logic modem chips.

According to a Johns Hopkins University / Applied Physics Laboratory (JHU/APL) report, and archival NASA source documentation (Johns Hopkins APL Technical Digest, July–September 1980, Vol. 1, No. 3), the MAGSAT spacecraft utilized two RCA 1802 microprocessors running at a 2 MHz clock speed in a redundant setup. A stored memory of 2.8 kilobytes in PROMs with 1 K bytes of random access memory (RAM) provided the program and working space for the microprocessor. Other integrated circuits chips of the CDP 1800 family of circuits were also used, including the CDP 1852 interface circuit and the CDP 1822 1K x 1 RAM, as well as Harris CMOS 6611A PROMS.

Solid-state storage (sometimes abbreviated as SSS) is a type of non-volatile computer storage that stores and retrieves digital information using only electronic circuits, without any involvement of moving mechanical parts. This differs fundamentally from the traditional electromechanical storage, which records data using rotating or linearly moving media coated with magnetic material. Solid-state storage devices typically store data using electrically- programmable non-volatile flash memory, however some devices use battery- backed volatile random-access memory (RAM). Having no moving mechanical parts, solid-state storage is much faster than traditional electromechanical storage; as a downside, solid-state storage is significantly more expensive and suffers from the write amplification phenomenon.

PrivateCore is a venture-backed startup located in Palo Alto, California that develops software to secure server data through server attestation and memory encryption. The company's attestation and memory encryption technology fills a gap that exists between “data in motion” encryption (TLS, email encryption) and “data at rest” encryption (disk encryption, tape encryption) by protecting “data in use” (random access memory). PrivateCore memory encryption technology protects against threats to servers such as cold boot attacks, hardware advanced persistent threats, rootkits/bootkits, computer hardware supply chain attacks, and physical threats to servers from insiders. PrivateCore was acquired by Facebook, a deal that was announced on 7 August 2014.

Nokia 8.3 5G is powered by the Qualcomm Snapdragon 765G system-on-chip. Depending on model, it has either six or eight gigabytes (GB) of random-access memory (RAM), and 64 or 128 GB of internal storage, which can be expanded with a microSD card up to 512 GB. In the dual-SIM model, there is space for two nano-SIMs and a microSD card. The phone weighs , and is thick, which is comparable with the Nokia Lumia 1320 and the Lumia 1520 introduced in 2013. It has a FHD+ 'PureDisplay' with a 24 megapixel (MP) punch hole camera and a chin at the bottom with the Nokia logo.

The same reasoning was in evidence when the Royal Bank of Canada's Canadian operations rebranded to RBC Royal Bank, or when Bank of Montreal rebranded their retail banking subsidiary BMO Bank of Montreal. Another common example is "RAM memory", which is redundant because "RAM" ("random-access memory") includes the initial of the word "memory". "PIN" stands for "personal identification number", obviating the second word in "PIN number"; in this case its retention may be motivated to avoid ambiguity with the homophonous word "pin". Other examples include "ATM machine", "EAB bank", "CableACE Award", "DC Comics", "HIV virus", Microsoft's NT Technology, and the formerly redundant "SAT test", now simply "SAT Reasoning Test").

However, these earlier timesharing programs were not completely interactive, and they pre-dated personal computers. Frankston described VisiCalc as a "magic sheet of paper that can perform calculations and recalculations", which "allows the user to just solve the problem using familiar tools and concepts". The Personal Software company began selling VisiCalc in mid-1979 for under $100, after a demonstration at the fourth West Coast Computer Faire and an official launch on June 4 at the National Computer Conference. It required an Apple II with 32K of random-access memory (RAM), and supported saving files to magnetic tape cassette or to Apple's Disk II floppy disk system.

The silicon-gate technology (SGT) was adopted by Intel upon its founding (July 1968), and within a few years became the core technology for the fabrication of MOS integrated circuits worldwide, lasting to this day. Intel was also the first company to develop non-volatile memory using floating silicon-gate transistors. The first memory chip to use silicon-gate technology was the Intel 1101 SRAM (static random-access memory) chip, fabricated in 1968 and demonstrated in 1969. The first commercial single-chip microprocessor, the Intel 4004, was developed by Faggin using his silicon-gate MOS IC technology, along with Marcian Hoff, Stan Mazor and Masatoshi Shima.

The secondary cache, termed the B-cache, is an external cache with a capacity of 1 to 16 MB. It is controlled by the microprocessor and is implemented by synchronous static random access memory (SSRAM) chips that operate at two thirds, half, one-third or one-fourth the internal clock frequency, or 133 to 333 MHz at 500 MHz. The B-cache was accessed with a dedicated 128-bit bus that operates at the same clock frequency as the SSRAM or at twice the clock frequency if double data rate SSRAM is used. The B-cache is direct-mapped.The Alpha 21264 Microprocessor Architecture, p. 5.

This project was eventually cancelled after just a few machines were manufactured for the Japanese market. At the same time, Robert "Bob" Russell (system programmer and architect on the VIC-20) and Robert "Bob" Yannes (engineer of the SID) were critical of the current product line-up at Commodore, which was a continuation of the Commodore PET line aimed at business users. With the support of Al Charpentier (engineer of the VIC-II) and Charles Winterble (manager of MOS Technology), they proposed to Commodore CEO Jack Tramiel a true low-cost sequel to the VIC-20. Tramiel dictated that the machine should have of random-access memory (RAM).

IEEE Computer Society Press, Los Alamitos, CA, USA, 148-159. Often confused with non-volatile random-access memory (NVRAM), persistent memory is instead more closely linked to the concept of persistence in its emphasis on program state that exists outside the fault zone of the process that created it. (A process is a program under execution. The fault zone of a process is that subset of program state which could be corrupted by the process continuing to execute after incurring a fault, for instance due to an unreliable component used in the computer executing the program.) Efficient, memory-like access is the defining characteristic of persistent memory.

On February 9, 2016, the FBI announced that it was unable to unlock the county-owned phone it recovered, due to its advanced security features, including encryption of user data. The FBI first asked the National Security Agency to break into the phone, but they were unable to since they only had knowledge of breaking into other devices that are commonly used by criminals, and not iPhones. As a result, the FBI asked Apple Inc. to create a new version of the phone's iOS operating system that could be installed and run in the phone's random access memory to disable certain security features that Apple refers to as "GovtOS".

The Apple IIGS (styled as IIGS), the fifth and most powerful of the Apple II family, is a 16-bit personal computer produced by Apple Computer, Inc. While featuring the Macintosh look and feel, and resolution and color similar to the Commodore Amiga and Atari ST, it remains compatible with earlier Apple II models. The "GS" in the name stands for "Graphics and Sound," referring to its enhanced multimedia hardware, especially its state-of-the-art audio. The microcomputer is a radical departure from any previous Apple II, with its 16-bit 65C816 microprocessor, direct access to megabytes of random-access memory (RAM), and mouse.

This operating system introduced many features that would appear for years to come, some that still exist in the current macOS, and a few that exist in other graphical operating systems such as Microsoft Windows. The features of the operating system included the Finder and menu bar. In addition to this, it popularized the graphical user interface and desktop metaphor, which was used under license from Xerox PARC. Due to the limited amount of random-access memory and the lack of an internal hard disk in the original Macintosh, there was no multitasking with multiple applications, although there were desktop accessories that could run while another application was loaded.

Two types of DIMMs: a 168-pin SDRAM module (top) and a 184-pin DDR SDRAM module (bottom). The SDRAM module has two notches (rectangular cuts or incisions) on the bottom edge, while the DDR1 SDRAM module has only one. Also, each module has eight RAM chips, but the lower one has an unoccupied space for the ninth chip; this space is occupied in ECC DIMMs Three SDRAM DIMM slots on a computer motherboard A DIMM or dual in-line memory module, commonly called RAM stick, comprises a series of dynamic random-access memory integrated circuits. These modules are mounted on a printed circuit board and designed for use in personal computers, workstations and servers.

Along with these added hardware requirements over standard SMP2 work units, they require more system resources such as random-access memory (RAM) and Internet bandwidth. In return, users who run these are rewarded with a 20% increase over SMP2's bonus point system. The bigadv category allows Folding@home to run especially demanding simulations for long times that had formerly required use of supercomputing clusters and could not be performed anywhere else on Folding@home. Many users with hardware able to run bigadv units have later had their hardware setup deemed ineligible for bigadv work units when CPU core minimums were increased, leaving them only able to run the normal SMP work units.

However, only the computer's random access memory was removed and the hard drive within the terminal was intact, containing photographs and files on many patients. KCTV attempted to contact several of the patients whose information was found on the discarded computer. The surgeon filed a lawsuit against the station on the basis that the investigative unit's decision to interview the patients about the discovery was a violation of medical confidentiality laws; the judge presiding over the suit ruled in favor of the doctor, although KCTV management took the case to a federal district court in Kansas City, Kansas. The doctor later withdrew the suit, clearing the way for the story to make it to air on June 30.

Thermal-assisted switching, or TAS, is one of the new second-generation approaches to magnetoresistive random-access memory (MRAM) currently being developed. A few different designs have been proposed, but all rely on the idea of reducing the required switching fields by heating. The first design's cell, which was proposed by James M. Daughton and co-workers, had a heating element, an MRAM bit, an orthogonal digit line, and used a low-Curie point ferromagnetic material as the storage layer. In a second and more-promising design, which was developed by the Spintec Laboratory (France) and subsequently licensed to Crocus Technology, the storage layer is made of a ferromagnetic and an antiferromagnetic layer.

Bangalter described the album's title as encapsulating Daft Punk's interest in the past, referencing both random-access memory technology and the human experience: "We were drawing a parallel between the brain and the hard drive – the random way that memories are stored." Daft Punk felt that while current technology allows for an unlimited capacity to store recorded material, the content produced by contemporary artists had diminished in quality. Their goal was therefore to maximize the potential of infinite storage by recording a sprawling amount of elements. The duo pointed to the process as being further inspiration for the album's title, as they sought to make connections out of the random series of ideas.

Dual-ported RAM (DPRAM) is a type of random-access memory that allows multiple reads or writes to occur at the same time, or nearly the same time, unlike single-ported RAM which allows only one access at a time. Video RAM or VRAM is a common form of dual-ported dynamic RAM mostly used for video memory, allowing the CPU to draw the image at the same time the video hardware is reading it out to the screen. Apart from VRAM, most other types of dual-ported RAM are based on static RAM technology. Most CPUs implement the processor registers as a small dual-ported or multi-ported RAM (see Register File).

To roadmap the future of the operating system and thus of the organizational chart, ideas were written on colored index cards and pinned to a wall. Ideas that were incremental updates to the existing system were written on blue colored cards, those that were more technologically advanced or long-term were written on pink cards, and yet more radical ideas were on red cards because they "would be pinker than Pink". The Blue group would receive the Gang's former management duo, along with incremental improvements in speed, and size of random-access memory (RAM) and hard disk drive (HDD). Pink would receive the Gang with Erich Ringewald as technical lead, plus pre-emptive multitasking and a componentized application design.

DEC Rigel DC520 CPU die shot The Rigel architecture was based on the VAX 8800 processor. It has a six-stage microinstruction pipeline and 64-entry fully associative translation look-aside buffer. The Rigel chip set supported an optional vector processor and the REX520 decoded any vector instructions and passed on to the vector interface (VC) chip by the REX520. The REX520 has a 2 KB unified primary cache, configurable as an instruction cache and an external 128 KB secondary cache (backup cache) implemented with CMOS static random access memory (SRAM) chips. The REX520 has an external cache because the VAX 8800's 64 KB primary cache could not be integrated on the same die.

The same principle was later used in the magnetic bubble memory developed in the 1980s, and is still found in various magnetic strip items such as metro tickets and some credit cards. In modern semiconductor memory, such as dynamic random-access memory, the two values of a bit may be represented by two levels of electric charge stored in a capacitor. In certain types of programmable logic arrays and read-only memory, a bit may be represented by the presence or absence of a conducting path at a certain point of a circuit. In optical discs, a bit is encoded as the presence or absence of a microscopic pit on a reflective surface.

Read–write memory is a type of computer memory that may be relatively easily written to as well as read from, that is, using electrical signalling normally associated with running a software, and without any other physical processes (unlike ROM or "read-only memory" and distinct from EEPROM). The related term RAM (for "random access memory") means something different; it refers to memory that can access any memory location in a constant amount of time. The term might also refer to memory locations having both read and write permissions. In modern computer systems using memory segmentation, each segment has a length and set of permissions (for example, read, write, execute) associated with it.

Common random access memory (RAM) of the Commodore C64-era allowed accesses at 2 MHz. If the CPU and display chip both shared the same memory to communicate, which was the common solution in the era when RAM was expensive, then one would normally have to have the CPU and display chip chips mediate access to the bus so that only one of them used it at a time, generally by having one pause the other. Assuming the two chips require roughly equal access, that means the chips are paused half of the time, effectively running at 1 MHz. The 6502-family had one design feature that eased the design of such systems.

When using computer hardware, an upgrade means adding new or additional hardware to a computer that improves its performance, increases its capacity, or adds new features. For example, a user could perform a hardware upgrade to replace the hard drive with a faster one or a Solid State Drive (SSD) to get a boost in performance. The user may also install more Random Access Memory (RAM) so the computer can store additional temporary data, or retrieve such data at a faster rate. The user may add a USB 3.0 expansion card to fully use USB 3.0 devices, or could upgrade the Graphics Processing Unit (GPU) for cleaner, more advanced graphics, or more monitors.

A second advantage of a spin transistor is that the spin of an electron is semi-permanent and can be used as means of creating cost-effective non-volatile solid state storage that does not require the constant application of current to sustain. It is one of the technologies being explored for Magnetic Random Access Memory (MRAM). Because of its high potential for practical use in the computer world, spin transistors are currently being researched in various firms throughout the world, such as in England and in Sweden. Recent breakthroughs have allowed the production of spin transistors, using readily available substances, that can operate at room temperature: a precursor to commercial viability.

Plessey System 250, also known as PP250, was the first operational computer to implement capability-based addressing, to check and balance the computation as a pure Church-Turing Machine. A Church-Turing Machine is a digital computer that encapsulates the symbols in a thread of computation as a chain of protected abstractions by enforcing the dynamic binding laws of Alonzo Church's Lambda Calculus Other Capability Based Computers including CHERI and CAP computer are hybrids. They retain default instructions that can access every word of accessible physical or logical (paged) memory. It is an unavoidable characteristic of the von Neumann Architecture that is founded on shared random access memory and blind trust in the sharing default access rights.

Multi-core CPUs are typically multiple CPU cores on the same die, connected to each other via a shared L2 or L3 cache, an on- die bus, or an on-die crossbar switch. All the CPU cores on the die share interconnect components with which to interface to other processors and the rest of the system. These components may include a front-side bus interface, a memory controller to interface with dynamic random access memory (DRAM), a cache coherent link to other processors, and a non-coherent link to the southbridge and I/O devices. The terms multi-core and microprocessor unit (MPU) have come into general use for one die having multiple CPU cores.

Famous inventions and developments by IBM include: the Automated teller machine (ATM), Dynamic random access memory (DRAM), the electronic keypunch, the financial swap, the floppy disk, the hard disk drive, the magnetic stripe card, the relational database, RISC, the SABRE airline reservation system, SQL, the Universal Product Code (UPC) bar code, and the virtual machine. Additionally, in 1990 company scientists used a scanning tunneling microscope to arrange 35 individual xenon atoms to spell out the company acronym, marking the first structure assembled one atom at a time. A major part of IBM research is the generation of patents. Since its first patent for a traffic signaling device, IBM has been one of the world's most prolific patent sources.

Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. This technology bears some similarities to conductive-bridging RAM (CBRAM), and phase-change memory (PCM). CBRAM involves one electrode providing ions that dissolve readily in an electrolyte material, while PCM involves generating sufficient Joule heating to effect amorphous-to-crystalline or crystalline-to-amorphous phase changes. On the other hand, ReRAM involves generating defects in a thin oxide layer, known as oxygen vacancies (oxide bond locations where the oxygen has been removed), which can subsequently charge and drift under an electric field.

It only supports loading and saving programs to the IBM cassette tape interface, which is unavailable on models after the original Model 5150. The entry-level version of the 5150 came with just 16 KB of random-access memory (RAM), which was sufficient to run Cassette BASIC. However, Cassette BASIC was rarely used because few PCs were sold without a disk drive, and most were sold with PC DOS and sufficient RAM to at least run Disk BASIC—many could run Advanced BASIC as well. There are three versions of Cassette BASIC: C1.00 (found on the early IBM PCs with 16k-64k motherboards), C1.10 (found on all later IBM PCs, XTs, ATs, and PS/2s), and C1.20 (found on the PCjr).

Eventide's original product line consisted of two products: the Instant Phaser (the result of an AES Show appearance), and what would become the 1745 Digital Delay Line (the result of a significant order from Maryland Public Broadcasting). Beginning with the 1745M, Eventide began widely using Random-access memory (RAM) chips in many of their products. After purchasing a Hewlett-Packard computer for researching reverb algorithms and needing to upgrade the memory in order for the computer to handle the necessary complex computations, Eventide designers realized that they could manufacture computer memory expansion far more affordably than the current market price. Therefore, Eventide began to manufacture and sell HP-compatible RAM expansion boards and did so from the late 1970s to the mid-1990s.

Whenever supervisor mode is needed, either by the kernel or user programs, the library functions `Supervisor()` or `SuperState()` are used. One limit of the Exec kernel was that an uncooperative program could disable multitasking for a long time, or indefinitely, by invoking Exec's calls `Forbid()` or `Disable()`, with no later invocation of corresponding `Permit()` or `Enable()`, causing the environment to run as one task. Multitasking could also be disabled by programs which, by software bug or intent, modify Exec's data structures or the code stored in random-access memory (RAM), possibly due to lack of memory management unit (MMU) support. Even with such limits, Exec satisfies the definition of preemptive scheduling algorithm, using a preemptive scheduling routine and basing its interrupt intervals on a clock.

Thyristor RAM (T-RAM) is a type of random-access memory dating from 2009 invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed. This technology, which exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor, Description of the technology is used to create memory cells capable of very high packing densities. Due to this, the memory is highly scalable, and already has a storage density that is several times higher than found in conventional six-transistor SRAM memory. It was expected that the next generation of T-RAM memory will have the same density as DRAM.

In order to match certain signatures, an IDS is required to keep state related to the connections it is monitoring. For example, an IDS must maintain "TCP control blocks" (TCBs), chunks of memory which track information such as sequence numbers, window sizes, and connection states (ESTABLISHED, RELATED, CLOSED, etc.), for each TCP connection monitored by the IDS. Once all of the IDS's random-access memory (RAM) is consumed, it is forced to utilized virtual memory on the hard disk which is much slower than RAM, leading to performance problems and dropped packets similar to the effects of CPU exhaustion. If the IDS doesn't garbage collect TCBs correctly and efficiently, an attacker can exhaust the IDS's memory by starting a large number of TCP connections very quickly.

A PTE may also include information about whether the page has been written to (the "dirty bit"), when it was last used (the "accessed bit," for a least recently used (LRU) page replacement algorithm), what kind of processes (user mode or supervisor mode) may read and write it, and whether it should be cached. Sometimes, a PTE prohibits access to a virtual page, perhaps because no physical random access memory has been allocated to that virtual page. In this case, the MMU signals a page fault to the CPU. The operating system (OS) then handles the situation, perhaps by trying to find a spare frame of RAM and set up a new PTE to map it to the requested virtual address.

The final model, the Lisa 2/10, was modified as the high end of the Macintosh series, the Macintosh XL. Considered a commercial failure but with technical acclaim, the Lisa introduced a number of advanced features that would not reappear on the Macintosh or the "PC" platform for many years. Among those is an operating system with protected memory and a more document-oriented workflow. The hardware overall is more advanced than the Macintosh, with a hard drive, support for up to 2 megabytes (MB) of random-access memory (RAM), expansion slots, and a larger, higher- resolution display. One notable exception is that the 68000 processor in the Macintosh is clocked at 7.89 megahertz (MHz) and the Lisa's is 5 MHz.

As he set out on his design project, what he envisioned for the future was a camera without mechanical moving parts (although his device did have moving parts, such as the tape drive). Sasson's patent claimed an arrangement that allowed the CCD to be read out quickly ("in real time") into a temporary buffer of random-access memory, and then written to storage at the lower speed of the storage device; Patent – Electronic Still camera essentially all modern digital cameras still use such an arrangement. His was not the first camera that produced digital images, but was the first hand-held digital camera. Earlier examples of digital cameras included some cameras used for satellite photography, experimental devices by Michael Francis Tompsett et al.

Not on the American computer this time, but on the peripheral computers which are of Russian origin. She finds out that all the Russian computers happened to be physically tampered with the installation of an additional processing unit made of a Zilog Z80 microprocessor and two ROMs. When this unit detects the code word "VENIK" at a specific address of the computer's random access memory, it erases everything and blocks the computer. Ioulia finally understand that the goal of the additional component is to allow the central government to shut down any activity (transports, power plants, industry, ...) that is controlled by the Russian computers in the remote regions, in order to serve as a mean to pressure the local government in case of political or military troubles.

In the history of computing, optimum programming, or optimum coding is the practice of arranging a computer program's instructions in memory so as to minimize the time the machine spends waiting for instructions. It is of historical interest mainly due to the design of many early digital computers. Most early computers used some form of serial memory, primarily delay line memory or magnetic drums Unlike the random access memory of modern computers, words in serial memory are made available one at a time; the time required to access a particular word depends on the "distance" between it and the word currently being read. If a given delay line held n words, the average time to read a word would be n/2 word times.

The advantages of text modes as compared to graphics modes include lower memory consumption and faster screen manipulation. At the time text terminals were beginning to replace teleprinters in the 1970s, the extremely high cost of random access memory in that period made it exorbitantly expensive to install enough memory for a computer to simultaneously store the current value of every pixel on a screen, to form what would now be called a framebuffer. Early framebuffers were standalone devices which cost thousands of dollars, in addition to the expense of the advanced high-resolution displays to which they were connected. For applications that required simple line graphics but for which the expense of a framebuffer could not be justified, vector displays were a popular workaround.

The main features of POWER10 are higher performance per watt, better memory and I/O architecture as well as a focus on artificial intelligence (AI) workloads. Performance per watt is addressed mainly by Samsung's 7 nm fabrication process. Better I/O and memory is handled by the PowerAXON facilities, handling communications with other chips and systems, the Open Memory Interface (OMI) memory technology scaling from core caches through random-access memory (RAM) and all the way to 2 PB of unified clustered memory space shared across multiple cluster nodes and support for PCIe 5. Technologies making AI loads' performance better stems from many new features to the SIMD capacity and enabling new datatypes like bfloat16, INT4(INTEGER) and INT8(BIGINT).

These PUFs use the randomness in the power-up behavior of standard static random-access memory on a chip as a PUF. The use of SRAM as a PUF was introduced in 2007 simultaneously by researchers at the Philips High Tech Campus and at the University of Massachusetts.Jorge Guajardo, Sandeep S. Kumar, Geert-Jan Schrijen, Pim Tuyls, "Physical Unclonable Functions and Public-Key Crypto for FPGA IP Protection", International Conference on Field Programmable Logic and Applications (FPL), Aug 27-29, 2007, Amsterdam, The Netherlands. Since the SRAM PUF can be connected directly to standard digital circuitry embedded on the same chip, they can be immediately deployed as a hardware block in cryptographic implementations, making them of particular interest for security solutions.

Jobs met Paul Berg, a Nobel Laureate in chemistry, at a luncheon held in Silicon Valley to honor François Mitterrand, then President of France. Berg was frustrated by the expense of teaching students about recombinant DNA from textbooks instead of in wet laboratories, used for the testing and analysis of chemicals, drugs, and other materials or biological matter. Wet labs were prohibitively expensive for lower-level courses and were too complex to be simulated on personal computers of the time. Berg suggested that Jobs should use his influence at Apple to create for higher education a "3M computer", a term for a workstation with one megabyte of random-access memory (RAM), a one- megapixel display, and one megaFLOPS of CPU performance.

The flip-flop uses a pair of amplifiers, transistors, or logic gates connected to each other so that positive feedback maintains the state of the circuit in one of two unbalanced stable states after the input signal has been removed, until a suitable alternative signal is applied to change the state. Computer random access memory (RAM) can be made in this way, with one latching circuit for each bit of memory. Thermal runaway occurs in electronic systems because some aspect of a circuit is allowed to pass more current when it gets hotter, then the hotter it gets, the more current it passes, which heats it some more and so it passes yet more current. The effects are usually catastrophic for the device in question.

Die-stacked memory was initially commercialized in the flash memory industry. Toshiba introduced a NAND flash memory chip with eight stacked dies in April 2007, followed by Hynix Semiconductor introducing a NAND flash chip with 24 stacked dies in September 2007. 3D-stacked random-access memory (RAM) using through- silicon via (TSV) technology was commercialized by Elpida Memory, which developed the first 8GB DRAM chip (stacked with four DDR3 SDRAM dies) in September 2009, and released it in June 2011. In 2011, SK Hynix introduced 16GB DDR3 memory (40nm class) using TSV technology, Samsung Electronics introduced 3D-stacked 32GB DDR3 (30nm class) based on TSV in September, and then Samsung and Micron Technology announced TSV-based Hybrid Memory Cube (HMC) technology in October.

Memory refresh is the process of periodically reading information from an area of computer memory and immediately rewriting the read information to the same area without modification, for the purpose of preserving the information."refresh cycle" in Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random-access memory (DRAM), the most widely used type of computer memory, and in fact is the defining characteristic of this class of memory. In a DRAM chip, each bit of memory data is stored as the presence or absence of an electric charge on a small capacitor on the chip. As time passes, the charges in the memory cells leak away, so without being refreshed the stored data would eventually be lost.

Improvements in console hardware followed with improvements in microprocessor technology and semiconductor device fabrication. Manufacturing processes have been able to reduce the feature size on chips (typically measured in nanometers), allowing more transistors and other components to fit on a chip, and at the same time increasing the circuit speeds and the potential frequency the chip can run at, as well as reducing thermal dissipation. Chips were able to be made on larger dies, further increasing the number of features and effective processing power. Random-access memory became more practical with the higher density of transistors per chip, but to address the correct blocks of memory, processors needed to be updated to use larger word sizes and allot for larger bandwidth in chip communications.

There is a relationship between the size and spacing of the dots and their lifetime, as well as the ability to reject crosstalk with adjacent dots. This places an upper limit on the memory density, and each Williams tube could typically store about 1024 to 2560 bits of data. Because the electron beam is essentially inertia-free and can be moved anywhere on the display, the computer can access any location, making it a random access memory. Typically, the computer would load the address as an X and Y pair into the driver circuitry and then trigger a time base generator that would sweep the selected locations, reading from or writing to the internal registers, normally implemented as flip-flops.

Schottky Bipolar 3101, 3101A RAMs Google Docs. In the same year, Intel also produced the 3301 Schottky bipolar 1024-bit read-only memory (ROM)Schottky Bipolar 3301A ROM Google Docs. and the first commercial metal–oxide–semiconductor field-effect transistor (MOSFET) silicon gate SRAM chip, the 256-bit 1101.Silicon Gate MOS 1101A RAM Google Docs. While the 1101 was a significant advance, its complex static cell structure made it too slow and costly for mainframe memories. The three-transistor cell implemented in the first commercially available dynamic random-access memory (DRAM), the 1103 released in 1970, solved these issues. The 1103 was the bestselling semiconductor memory chip in the world by 1972, as it replaced core memory in many applications.

Another approach to see major development effort is magnetoresistive random- access memory, or MRAM, which uses magnetic elements and in general operates in a fashion similar to core, at least for the first-generation technology. Only one MRAM chip has entered production to date: Everspin Technologies' 4 Mbit part, which is a first-generation MRAM that utilizes cross-point field induced writing. Two second-generation techniques are currently in development: Thermal Assisted Switching (TAS), which is being developed by Crocus Technology, and spin-transfer torque (STT) on which Crocus, Hynix, IBM, and several other companies are working. STT-MRAM appears to allow for much higher densities than those of the first generation, but is lagging behind flash for the same reasons as FeRAM - enormous competitive pressures in the flash market.

SSDs based on volatile memory such as DRAM are characterized by very fast data access, generally less than 10 microseconds, and are used primarily to accelerate applications that would otherwise be held back by the latency of flash SSDs or traditional HDDs. DRAM-based SSDs usually incorporate either an internal battery or an external AC/DC adapter and backup storage systems to ensure data persistence while no power is being supplied to the drive from external sources. If power is lost, the battery provides power while all information is copied from random access memory (RAM) to back-up storage. When the power is restored, the information is copied back to the RAM from the back-up storage, and the SSD resumes normal operation (similar to the hibernate function used in modern operating systems).

A study published in 2008 found data remanence in dynamic random-access memory (DRAM), with data retention of seconds to minutes at room temperature and much longer times when memory chips were cooled to low temperature. The study authors were able to use a cold boot attack to recover cryptographic keys for several popular disk encryption systems, including FileVault, by taking advantage of redundancy in the way keys are stored after they have been expanded for efficient use, such as in key scheduling. The authors recommend that computers be powered down, rather than be left in a "sleep" state, when not in physical control by the owner. Early versions of FileVault automatically stored the user's passphrase in the system keychain, requiring the user to notice and manually disable this security hole.

Direct memory access (DMA) is a feature of computer systems that allows certain hardware subsystems to access main system memory (random-access memory) independent of the central processing unit (CPU). Without DMA, when the CPU is using programmed input/output, it is typically fully occupied for the entire duration of the read or write operation, and is thus unavailable to perform other work. With DMA, the CPU first initiates the transfer, then it does other operations while the transfer is in progress, and it finally receives an interrupt from the DMA controller (DMAC) when the operation is done. This feature is useful at any time that the CPU cannot keep up with the rate of data transfer, or when the CPU needs to perform work while waiting for a relatively slow I/O data transfer.

Although 64-Kbit dynamic random-access memory (DRAM) chips cost over at the time, he knew that 64K DRAM prices were falling and would drop to an acceptable level before full production was reached. The team was able to quickly design the computer because, unlike most other home-computer companies, Commodore had its own semiconductor fab to produce test chips; because the fab was not running at full capacity, development costs were part of existing corporate overhead. The chips were complete by November, by which time Charpentier, Winterble, and Tramiel had decided to proceed with the new computer; the latter set a final deadline for the first weekend of January, to coincide with the 1982 Consumer Electronics Show (CES). The product was code named the VIC-40 as the successor to the popular VIC-20.

Peripheral units are on shelves in the SM. In most exchanges the majority are Line Units (LU) and Digital Line Trunk Units (DLTU). Each SM has Local Digital Service Units (LDSU) to provide various services to lines and trunks in the SM, including tone generation and detection. Global Digital Service Units (GDSU) provide less-frequently used services to the entire exchange. The Time Slot Interchanger (TSI) in the SM uses random-access memory to delay each speech sample to fit into a time slot which will carry its call through the exchange to another or, in some cases, the same SM. T-carrier spans are terminated, originally one per card but in later models usually two, in Digital Line Trunk Units (DLTU) which concentrate their DS0 channels into the TSI.

Image analysis involves complex computer algorithms which identify and characterize cellular color, shape, and quantity of the tissue sample using image pattern recognition technology based on vector quantization. Vector representations of objects in the image, as opposed to bitmap representations, have superior zoom-in ability. Once the sample image has been acquired and resident in the computer's random access memory as a large array of 0's and 1's, a programmer knowledgeable in cellular architecture can develop deterministic algorithms applied to the entire memory space to detect cell patterns from previously defined cellular structures and formations known to be significant. The aggregate algorithm outcome is a set of measurements that is far superior to any human sensitivity to intensity or luminance and color hue, while at the same time improving test consistency from eyeball to eyeball.

The invention of the MOSFET (metal-oxide-semiconductor field-effect transistor), also known as the MOS transistor, by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, led to the development of metal- oxide-semiconductor (MOS) memory by John Schmidt at Fairchild Semiconductor in 1964. In addition to higher performance, MOS semiconductor memory was cheaper and consumed less power than magnetic core memory. The development of silicon- gate MOS integrated circuit (MOS IC) technology by Federico Faggin at Fairchild in 1968 enabled the production of MOS memory chips. MOS memory overtook magnetic core memory as the dominant memory technology in the early 1970s. An integrated bipolar static random-access memory (SRAM) was invented by Robert H. Norman at Fairchild Semiconductor in 1963. It was followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964.

Historically, the out of memory condition was more common than it is now, since early computers and operating systems were limited to small amounts of physical random-access memory (RAM) due to the inability of early processors to address large amounts of memory, as well as cost considerations. Since the advent of virtual memory opened the door for the usage of swap space, the condition is less frequent. Almost all modern programs expect to be able to allocate and deallocate memory freely at run-time, and tend to fail in uncontrolled ways (crash) when that expectation is not met; older ones often allocated memory only once, checked whether they got enough to do all their work, and then expected no more to be forthcoming. Therefore, they would either fail immediately with an "out of memory" error message, or work as expected.

The music from the game was released as a two-disc soundtrack album in Japan by NTT Publishing on March 25, 1996, titled Super Mario RPG Original Sound Version. Super Mario RPG: Legend of the Seven Stars is one of only seven SNES games released outside Japan to use the Nintendo SA-1 chip. Compared with standard SNES games, the additional microprocessor allows these features: higher clock speeds; faster access to the random-access memory (RAM); greater memory mapping capabilities, data storage, and compression; new direct memory access (DMA) modes, such as bitmap to bit plane transfer; and built-in CIC lockout for piracy protection and regional marketing control. It was not released in PAL regions such as Europe; Nintendo representatives cited the need to optimize the game for PAL televisions and translate it into multiple languages.

IBM Research's numerous contributions to physical and computer sciences include the Scanning Tunneling Microscope and high-temperature superconductivity, both of which were awarded the Nobel Prize. IBM Research was behind the inventions of the SABRE travel reservation system, the technology of laser eye surgery, magnetic storage, the relational database, UPC barcodes and Watson, the question-answering computing system that won a match against human champions on the Jeopardy! television quiz show. The Watson technology is now being commercialized as part of a project with healthcare company Anthem Inc.. Other notable developments include the Data Encryption Standard (DES), fast Fourier transform (FFT), Benoît Mandelbrot's introduction of fractals, magnetic disk storage (hard disks, the MELD-Plus risk score, the one-transistor dynamic random-access memory (DRAM), the reduced instruction set computer (RISC) architecture, relational databases, and Deep Blue (grandmaster-level chess-playing computer).

The PowerBook 100 Power Manager was an integrated circuit, usually placed on the logic board of a PowerBook, and was responsible for the power management of the computer. Identical to that of the Macintosh Portable, it controlled the display's backlight, hard drive spin-down, sleep and wake, battery charging, trackball control, and input/output (I/O). The 100 did add a new feature: 3.5 V batteries backed up permanent and expansion random access memory (RAM) when the PowerBook 100's battery was being replaced or when the 100 was otherwise temporarily removed from all power sources. This made it a perfect candidate for use with Apple's RAM disk to help increase battery life by accessing the hard disk less frequently, since the 100 was the only PowerBook that maintained the contents of RAM on shutdown in order to reduce startup time.

Prior to January 1991, pointing, data taking, and calibration of the radio telescope were controlled by a Data General Nova minicomputer ( picture ) running a custom telescope-control system. The control computer was fairly limited in speed and memory (having only 32 K byte of random access memory and 5 M byte of fixed disk storage), but it was fast enough to allow limited data reduction on-line. For further processing, all scans were transferred via 1600 bpi 9-track magnetic tape to a Digital Equipment VAXstation II/GPX workstation. In January 1991, the telescope-control functions were transferred to a Macintosh IIfx computer, running a translated and improved version of the telescope-control system written in C. Individual scans or more commonly concatenated files containing large numbers of scans can be obtained from the control computer directly over the Internet.

Management believed that "once the Apple III was out, the Apple II would stop selling in six months", Wozniak said. The Apple III is powered by a 1.8-megahertz Synertek 6502A or B 8-bit CPU and, like some of the later machines in the Apple II family, uses bank switching techniques to address memory beyond the 6502's traditional 64 kB limit, up to 256 kB in the III's case. Third-party vendors produced memory upgrade kits that allow the Apple III to reach up to 512 kB of random-access memory (RAM). Other Apple III built-in features include an 80-column, 24-line display with upper and lowercase characters, a numeric keypad, dual-speed (pressure- sensitive) cursor control keys, 6-bit (DAC) audio, and a built-in 140-kilobyte 5.25-inch floppy disk drive.

A solution was found in flash memory, which is an electronic non- volatile computer storage media that can be electrically erased and reprogrammed. Solid-state storage typically uses the NAND type of flash memory, which may be written and read in chunks much smaller than the entire size of the storage device. The size of a minimal chunk (page) for read operations is much smaller than the minimal chunk size (block) for write/erase operations, resulting in an undesirable phenomenon called write amplification that limits the random write performance and write endurance of flash-based solid-state storage devices. Another type of solid-state storage devices uses volatile random-access memory (RAM) combined with a battery that allows the contents of RAM to be preserved for a limited amount of time after the device's power supply is interrupted.

Soon after, FTC investigators filed a brief to appeal against that ruling. On August 2, 2006, the FTC overturned McGuire's ruling, stating that Rambus illegally monopolized the memory industry under section 2 of the Sherman Antitrust Act, and also practiced deception that violated section 5 of the Federal Trade Commission Act. February 5, 2007, the FTC issued a ruling that limits maximum royalties that Rambus may demand from manufacturers of dynamic random-access memory (DRAM), which was set to 0.5% for DDR SDRAM for 3 years from the date the commission's Order is issued and then going to 0; while SDRAM's maximum royalty was set to 0.25%. The Commission claimed that halving the DDR SDRAM rate for SDRAM would reflect the fact that while DDR SDRAM utilizes four of the relevant Rambus technologies, SDRAM uses only two.

TRESOR (recursive acronym for "TRESOR Runs Encryption Securely Outside RAM", and also the German word for a safe) is a Linux kernel patch which provides CPU-only based encryption to defend against cold boot attacks on computer systems by performing encryption outside usual random-access memory (RAM). It is one of two proposed solutions for general-purpose computers (the other uses CPU cache for the same purposeThe other has been called frozen cache; the two are similar in using CPU based encryption key storage, but differs in that frozen cache uses CPU cache for the purpose rather than CPU registers. ), was developed from its predecessor AESSE, presented at EuroSec 2010 and presented at USENIX Security 2011. The authors state that it allows RAM to be treated as untrusted from a security viewpoint without hindering the system.

MUMPS ("Massachusetts General Hospital Utility Multi-Programming System"), or M, is an integrated programming language and key–value database originally developed at Massachusetts General Hospital for managing hospital laboratory information systems. M[UMPS] technology has since expanded across the United States as the predominant technology for health information systems and electronic health records. M[UMPS]-based information systems today run over 40% of the hospitals in the U.S., run most of the 3500+ U.S. federal hospitals and clinics, and provide health information services for over 54% of patients across the U.S. A key feature of the M language is its integrated database, allowing direct, high-speed read-write access to permanent disk storage, with similar speed of languages accessing temporary random access memory.. This provides tight integration of unlimited applications within a single database, and provides extremely high performance and reliability as an online transaction processing system.

The Manchester Baby, also called the Small-Scale Experimental Machine (SSEM), was the first electronic stored-program computer, was built at the University of Manchester by Frederic C. Williams, Tom Kilburn, and Geoff Tootill, and ran its first program on 21 June 1948. The machine was not intended to be a practical computer, but was instead designed as a testbed for the Williams tube, the first truly random-access memory. Although considered "small and primitive" even by the standards of its own time, it was nonetheless the first working machine to contain all the elements essential to a modern electronic computer. As soon as the Baby had demonstrated the feasibility of its design, a project was initiated at the university to develop it into a more usable computer, the . The Mark 1 in turn quickly became the prototype for the Ferranti Mark 1, the world's first commercially available general-purpose computer.

An important technological advance that enabled practical computer graphics technology was the emergence of metal–oxide–semiconductor (MOS) large-scale integration (LSI) technology in the early 1970s. MOS LSI technology made possible large amounts of computational capability in small MOS integrated circuit chips, which led to the development of the Tektronix 4010 computer graphics terminal in 1972, as well as the microprocessor in 1971. MOS memory, particularly the dynamic random-access memory (DRAM) chip introduced in 1970, was also capable of holding kilobits of data on a single high-density memory chip, making it possible to hold an entire standard-definition (SD) raster graphics image in a digital frame buffer, which was used by Xerox PARC to develop SuperPaint, the first video-compatible, raster-based computer graphics system, in 1972. The Utah teapot by Martin Newell and its static renders became emblematic of CGI development during the 1970s.

Microsoft and Intel have tried to "cement" netbooks in the low end of the market to protect mainstream notebook PC sales, because they get lower margins on low-cost models. The companies have limited the specifications of netbooks, but despite this original equipment manufacturers have announced higher-end netbooks models as of March 2009. Ending in 2008 the report was that the typical netbook featured a weight, a screen, wireless Internet connectivity, Linux or Windows XP, an Intel Atom processor, and a cost of less than $400 US. A mid-2009 newspaper article said that a typical netbook is , $300 US, and has a screen, of random-access memory, a hard disk drive, and a wireless transceiver for both home and a mobile network. Buyers drove the netbook market towards larger screens, which grew from in the original Asus Eee PC 700 to models in the summer of 2009.

In computer security, a cold boot attack (or to a lesser extent, a platform reset attack) is a type of side channel attack in which an attacker with physical access to a computer performs a memory dump of a computer's random access memory (RAM) by performing a hard reset of the target machine. Typically, cold boot attacks are used to retrieve encryption keys from a running operating system for malicious or criminal investigative reasons. The attack relies on the data remanence property of DRAM and SRAM to retrieve memory contents that remain readable in the seconds to minutes after power has been removed. An attacker with physical access to a running computer typically executes a cold boot attack by cold-booting the machine and booting a lightweight operating system from a removable disk to dump the contents of pre-boot physical memory to a file.

Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM) is a type of non-volatile random- access memory. PRAMs exploit the unique behaviour of chalcogenide glass. In the older generation of PCM, heat produced by the passage of an electric current through a heating element generally made of titanium nitride was used to either quickly heat and quench the glass, making it amorphous, or to hold it in its crystallization temperature range for some time, thereby switching it to a crystalline state. PCM also has the ability to achieve a number of distinct intermediary states, thereby having the ability to hold multiple bits in a single cell, but the difficulties in programming cells in this way has prevented these capabilities from being implemented in other technologies (most notably flash memory) with the same capability.

The OLCF's IBM AC922 Summit supercomputer. The IBM AC922 Summit, or OLCF-4, is ORNL’s 200-petaflop flagship supercomputer. Summit was originally launched in June 2018, and as of the November 2019 TOP500 list, is the fastest computer in the world with a High Performance Linpack (HPL) performance of 148.6 petaflops. Summit is also the first computer to reach exascale performance, achieving a peak throughput of 1.88 exaops through a mixture of single- and half-precision floating point operations. Like its predecessor Titan, Summit makes use of a hybrid architecture that integrates its 9,216 Power9 CPUs and 27,648 NVIDIA Volta V100 GPUs using NVIDIA’s NVLink. Summit features 4,608 nodes (nearly a quarter of Titan’s 18,688 nodes), each with 512 GB of Double Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4) and 96 GB of High Bandwidth Memory (HBM2) per node, with a total storage capacity of 250 petabytes.

ECC protects against undetected memory data corruption, and is used in computers where such corruption is unacceptable, for example in some scientific and financial computing applications, or in file servers. ECC also reduces the number of crashes that are especially unacceptable in multi-user server applications and maximum-availability systems. Electrical or magnetic interference inside a computer system can cause a single bit of dynamic random-access memory (DRAM) to spontaneously flip to the opposite state. It was initially thought that this was mainly due to alpha particles emitted by contaminants in chip packaging material, but research has shown that the majority of one-off soft errors in DRAM chips occur as a result of background radiation, chiefly neutrons from cosmic ray secondaries, which may change the contents of one or more memory cells or interfere with the circuitry used to read or write to them.

Some very heavily optimized pipelines have yielded speed increases of several hundred times the original CPU-based pipeline on one high-use task. A simple example would be a GPU program that collects data about average lighting values as it renders some view from either a camera or a computer graphics program back to the main program on the CPU, so that the CPU can then make adjustments to the overall screen view. A more advanced example might use edge detection to return both numerical information and a processed image representing outlines to a computer vision program controlling, say, a mobile robot. Because the GPU has fast and local hardware access to every pixel or other picture element in an image, it can analyze and average it (for the first example) or apply a Sobel edge filter or other convolution filter (for the second) with much greater speed than a CPU, which typically must access slower random-access memory copies of the graphic in question.

Row hammer (also written as rowhammer) is a security exploit that takes advantage of an unintended and undesirable side effect in dynamic random- access memory (DRAM) in which memory cells leak their charges by interactions between themselves, possibly leaking or changing the contents of nearby memory rows that were not addressed in the original memory access. This bypass of the isolation between DRAM memory cells results from the high cell density in modern DRAM, and can be triggered by specially crafted memory access patterns that rapidly activate the same memory rows numerous times. While cell charge leakage is normal and mitigated by refreshes, additional leakage occurs during a rowhammer attack which causes cells to leak enough charge to change its content within a refresh interval. The row hammer effect has been used in some privilege escalation computer security exploits, and network-based attacks are also theoretically possible in a fast network connection between the attacker and victim.

Due to Hoff's formulation lacking key details, Shima came up with his own ideas to find solutions for its implementation. They both eventually realized the 4-bit microprocessor concept, with the help of Intel's Stanley Mazor to interpret the ideas of Shima and Hoff. Shima was responsible for adding a 10-bit static shift register to make it useful as a printer's buffer and keyboard interface, many improvements in the instruction set, making the random-access memory (RAM) organization suitable for a calculator, the memory address information transfer, the key program in an area of performance and program capacity, the functional specification, decimal computer idea, software, desktop calculator logic, real-time input/output (I/O) control, and data exchange instruction between the accumulator and general purpose register. The specifications of the four chips were developed over a period of a few months in 1969, between an Intel team led by Hoff and a Busicom team led by Shima.

The Geometry board is responsible for geometry and image processing and is divided into four stages, each stage being implemented by separate device(s). The first stage is the Host Interface. Due to the InfiniteReality being designed for two very different platforms, the traditional shared memory bus-based Onyx using the POWERpath-2 bus, and the distributed shared memory network-based Onyx2 using the NUMAlink2 interconnect, the InfiniteReality had to have an interface that could provide similar performance on both platforms, which had a large difference in incoming bandwidth (200 MB/s versus 400 MB/s respectively). To this end, a Host Interface Processor, an embedded RISC core, is used to fetch display list objects using direct memory access (DMA). The Host Interface Processor is accompanied by 16 MB of synchronous dynamic random access memory (SDRAM), of which 15 MB is used to cache display leaf objects. The cache can deliver data to the next stage at over 300 MB/s.

Differently from Abstract syntax tree and CST Parse tree, in case of huge Classes having more than 65535 objects, the DST Object Dictionary structure (68,083 nodes), will be paged into some small XML files, about 575KB sized each. The same will be done with the Dynamic Syntax Tree itself: only 4096 Classes at time will be processed, max 135KB each. There will be no case of RAM Random access memory usage over 700MB, that means it can be able to perform a Static Analysis using a low-end Windows XP notebook with 1GB of RAM and a single-core processor, and up to 5 simultaneously static analysis of different applications at time can be achieved using only a 4GB RAM, dual-core processor machine. So, performances will be scalable depending on hardware architecture, with the guarantee of performing at least a complete static analysis starting from a notebook and going up to multi-core machine.

The arcade PAC-MAN system board contained 2KB of main RAM (random-access memory) in which to run the program, 2KB of video RAM to store the screen state, and 16KB of ROM (read- only memory) to store the game code, whereas the Atari 2600 featured only 128 bytes of RAM memory and none dedicated to video: effectively 32 times less RAM. The Zilog Z80 CPU microprocessor used by the Namco Pac-Man arcade system is clocked at three times the speed of the MOS 6507 CPU in the Atari 2600 - though the Z80 typically does less work per clock cycle. To deal with these limitations, Frye simplified the maze's intricate pattern of corridors to a more repetitive pattern. The small tan pellets in the arcade original were changed to rectangular "wafers" that shared the wall color on the 2600; a change necessitated because both the pellets and walls were drawn with the 2600's Playfield graphics, which have a fixed width.

Rare had originally intended these details to access password-protected sections of promotional websites and use them for an alternate reality game. As developers kept adding features, the game ended up using all the extra memory on their debug consoles and became too big to fit into the Nintendo 64's standard 4 MB of random-access memory (RAM). Because the developers were unable to optimise it, they decided to make use of the Nintendo 64 Expansion Pak, which increases the Nintendo 64's RAM from 4 MB to 8 MB. Although the Expansion Pak is required to access the game's campaign and most of the multiplayer features, a limited subset of deathmatch options are available without the device—around 35% of the game is playable without an Expansion Pak, as estimated on the game's instruction booklet. The Expansion Pak also allows the game to optionally be played in a 480i "high-resolution" mode.

Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM both use a capacitor and transistor but instead of using a simple dielectric layer the capacitor, a F-RAM cell contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O3], commonly referred to as PZT. The Zr/Ti atoms in the PZT change polarity in an electric field, thereby producing a binary switch. Due to the PZT crystal maintaining polarity, F-RAM retains its data memory when power is shut off or interrupted. Due to this crystal structure and how it is influenced, F-RAM offers distinct properties from other nonvolatile memory options, including extremely high, although not infinite, endurance (exceeding 1016 read/write cycles for 3.3 V devices), ultra low power consumption (since F-RAM does not require a charge pump like other non- volatile memories), single-cycle write speeds, and gamma radiation tolerance.

Among key hardware features in the iPhone was a large random access memory (RAM) size compared to most other smartphones on the market as well as a larger screen, making it capable of running more complex apps, and a new iOS operating system that could handle multitasking, far surpassing any other device on the market at the time. The iPhone also included various sensors such as an accelerometer, and excluding the first generation, also included a capacitive touchscreen that did not require any stylus and could be controlled by a finger, with later models adding support for multipoint sensing. Alongside the release, Apple affirmed that third-party apps could be developed for the phone's iOS operating system and distributed through an App Store, made available to users in July 2008; Apple made terms of using the tools and App Store low-cost and easy to use to encourage development of third-party apps. Developers, including game developers, rushed to take advantage of the App Store.

Virtual memory compression (also referred to as RAM compression and memory compression) is a memory management technique that utilizes data compression to reduce the size or number of paging requests to and from the auxiliary storage. In a virtual memory compression system, pages to be paged out of virtual memory are compressed and stored in physical memory, which is usually random-access memory (RAM), or sent as compressed to auxiliary storage such as a hard disk drive (HDD) or solid-state drive (SSD). In both cases the virtual memory range, whose contents has been compressed, is marked inaccessible so that attempts to access compressed pages can trigger page faults and reversal of the process (retrieval from auxiliary storage and decompression). The footprint of the data being paged is reduced by the compression process; in the first instance, the freed RAM is returned to the available physical memory pool, while the compressed portion is kept in RAM.

Originally, data was simply passed one-way from a central processing unit (CPU) to a graphics processing unit (GPU), then to a display device. As time progressed, however, it became valuable for GPUs to store at first simple, then complex structures of data to be passed back to the CPU that analyzed an image, or a set of scientific-data represented as a 2D or 3D format that a video card can understand. Because the GPU has access to every draw operation, it can analyze data in these forms quickly, whereas a CPU must poll every pixel or data element much more slowly, as the speed of access between a CPU and its larger pool of random-access memory (or in an even worse case, a hard drive) is slower than GPUs and video cards, which typically contain smaller amounts of more expensive memory that is much faster to access. Transferring the portion of the data set to be actively analyzed to that GPU memory in the form of textures or other easily readable GPU forms results in speed increase.

A six-transistor CMOS SRAM cell A typical SRAM cell is made up of six MOSFETs. Each bit in an SRAM is stored on four transistors (M1, M2, M3, M4) that form two cross-coupled inverters. This storage cell has two stable states which are used to denote 0 and 1. Two additional access transistors serve to control the access to a storage cell during read and write operations. In addition to such six-transistor (6T) SRAM, other kinds of SRAM chips use 4, 8, 10 (4T, 8T, 10T SRAM), or more transistors per bit.United States Patent 6975532: Quasi-static random access memory Four-transistor SRAM is quite common in stand-alone SRAM devices (as opposed to SRAM used for CPU caches), implemented in special processes with an extra layer of polysilicon, allowing for very high-resistance pull-up resistors. The principal drawback of using 4T SRAM is increased static power due to the constant current flow through one of the pull-down transistors. Four transistor SRAM provides advantages in density at the cost of manufacturing complexity.

Architectural schematic showing how the four cathode ray tubes (shown in green) were deployed Although Newman played no engineering role in the development of the Baby, or any of the subsequent Manchester computers, he was generally supportive and enthusiastic about the project, and arranged for the acquisition of war-surplus supplies for its construction, including GPO metal racks and "…the material of two complete Colossi" from Bletchley. By June 1948 the Baby had been built and was working. It was in length, tall, and weighed almost . The machine contained 550 valves (vacuum tubes)—300 diodes and 250 pentodes—and had a power consumption of 3500 watts. The arithmetic unit was built using EF50 pentode valves, which had been widely used during wartime. The Baby used one Williams tube to provide 32 by 32-bit words of random-access memory (RAM), a second to hold a 32-bit accumulator in which the intermediate results of a calculation could be stored temporarily, and a third to hold the current program instruction along with its address in memory.

In order to limit production cost, Busicom wanted to design a calculator engine that would be based on a few integrated circuits (ICs), containing some ROMs and shift registers and that could be adapted to a broad range of calculators by just changing the ROM IC chips. Busicom's engineers came up with a design that required 12 ICsAugarten S.: Bit by Bit, page 263-265, Ticknor & Fields, 1984 and asked Intel, a company founded one year earlier in 1968 for the purpose of making solid state random-access memory (RAM), to finalize and manufacture their calculator engine. People who were influential in convincing Busicom to switch to using microprocessors were Tadashi Sasaki and Robert Noyce. Intel's Ted Hoff was assigned to studying Busicom's design, and came up with a much more elegant, 4 ICs architecture centered on what was to become the 4004 microprocessor surrounded by a mixture of 3 different ICs containing ROM, shift registers, input/output ports and RAM—Intel's first product (1969) was the 3101 Schottky TTL bipolar 64-bit SRAM.

The industry's first 25 nanometer transistor operating on just 0.7 volt was demonstrated in December 2002 by TSMC. The "Omega FinFET" design, named after the similarity between the Greek letter "Omega" and the shape in which the gate wraps around the source/drain structure, has a gate delay of just 0.39 picosecond (ps) for the N-type transistor and 0.88 ps for the P-type. In 2004, Samsung demonstrated a "Bulk FinFET" design, which made it possible to mass-produce FinFET devices. They demonstrated dynamic random-access memory (DRAM) manufactured with a 90nm Bulk FinFET process. In 2011, Intel demonstrated tri-gate transistors, where the gate surrounds the channel on three sides, allowing for increased energy efficiency and lower gate delay—and thus greater performance—over planar transistors. Commercially produced chips at 22 nm and below have utilised FinFET gate designs. Intel's "Tri-Gate" variant were announced at 22nm in 2011 for its Ivy Bridge microarchitecture.Intel 22nm 3-D Tri-Gate Transistor Technology These devices shipped from 2012 onwards.

The first programmable pocket calculator was the HP-65, in 1974; it had a capacity of 100 instructions, and could store and retrieve programs with a built-in magnetic card reader. Two years later the HP-25C introduced continuous memory, i.e., programs and data were retained in CMOS memory during power-off. In 1979, HP released the first alphanumeric, programmable, expandable calculator, the HP-41C. It could be expanded with random access memory (RAM, for memory) and read-only memory (ROM, for software) modules, and peripherals like bar code readers, microcassette and floppy disk drives, paper-roll thermal printers, and miscellaneous communication interfaces (RS-232, HP-IL, HP-IB). The HP-65, the first programmable pocket calculator (1974) The first Soviet pocket battery-powered programmable calculator, Elektronika B3-21, was developed by the end of 1976 and released at the start of 1977. The successor of B3-21, the Elektronika B3-34 wasn't backward compatible with B3-21, even if it kept the reverse Polish notation (RPN). Thus B3-34 defined a new command set, which later was used in a series of later programmable Soviet calculators.